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參數(shù)資料
| 型號： | CE1F3P |
| 廠商： | NEC Corp. |
| 英文描述： | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| 中文描述： | 片上NPN硅外延電阻晶體管中速開關 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 141K |
| 代理商： | CE1F3P |
2002
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The CE1F3P is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter and zener diode
in collector to base as protect elements. This transistor is ideal for
actuator drives of OA equipments and electric equipments.
FEATURES
On-chip zener diode for surge voltage absorption
On-chip bias resistor: R1 = 2.2 k
, R2 = 10 k
Low power consumption during driving:
V
OL
= 0.12 V @V
I
= 5.0 V, I
C
= 0.5 A
On-chip dumper diode for reverse cable
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
±
10
60
±
10
V
Collector to emitter voltage
V
CEO
V
Emitter to base voltage
V
EBO
15
±
2.0
±
3.0
V
Collector current (DC)
I
C(DC)
A
Collector current (Pulse)
I
C(pulse)
*
A
Base current (DC)
I
B(DC)
0.03
A
Total power dissipation
P
T
1.0
W
°
C
°
C
Junction temperature
T
j
150
Storage temperature
T
stg
55 to +150
* PW
≤
10 ms, duty cycle
≤
50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Colletor to emitter voltage
V
CEO(SUS)
I
C
= 2.0 A, I
B
= 5.0 Ma, L = 6.0 mH
50
60
V
I
CBO
V
CB
= 40 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 5.0 V, I
C
= 0.2 A
700
1200
DC current gain
h
FE2
**
V
CE
= 5.0 V, I
C
= 1.0 A
1000
1600
3000
DC current gain
h
FE3
**
V
CE
= 5.0 V, I
C
= 2.0 A
500
1200
Low level output voltage
V
OL
**
V
I
= 5.0 V, I
C
= 0.5 A
V
CE
= 12 V, I
C
= 100
μ
A
0.12
0.3
V
Low level input voltage
V
IL
**
0.5
0.4
V
Input resistance 1
R
1
1.54
2.2
2.86
k
k
μ
s
μ
s
μ
s
Input resistance 2
R
2
7.0
10.0
13.0
Turn-on time
t
on
0.4
Storage time
t
stg
1.4
Fall time
t
f
I
C
= 1.0 A
I
BI
=
I
B2
= 10 mA
V
CC
= 20 V, R
L
= 20
0.5
**Pulse test PW
≤
350
μ
s, duty cycle
≤
2 %
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