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參數(shù)資料
| 型號： | CDU83 |
| 英文描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-237 |
| 中文描述： | 晶體管|晶體管|叩| 20V的五（巴西）總裁| 3A條一（c）|至237 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 41K |
| 代理商： | CDU83 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR TRANSISTOR
CDU 83
TO-237
BCE
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak Collector Current
Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
ICP
PD
Tj, Tstg
VALUE
20
95
6.0
3.0
6.0
900
-55 to +150
UNIT
V
V
V
A
A
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
ICBO
IEBO
hFE*
TEST CONDITION
VCB=50V, IE=0
VEB=5V, IC=0
IC=500mA,VCE=2V
IC=3A,VCE=2V
MIN
-
-
100
75
-
-
TYP
-
-
-
-
-
-
MAX
1.0
1.0
560
-
0.60
`1.50
UNIT
uA
uA
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
VCE(Sat) * IC=3A, IB=60mA
VBE(Sat) * IC=3A, IB=60mA
V
V
Dynamic Characteristics
Output Capacitance
Gain Bandwidth Product
*Pulse Test : tp=300us, Duty Cycle=2%
Cob VCB=10V, IE=0, f=1MHz
ft VCE=10V, IC=50mA,
-
-
45
120
-
-
pF
MHz
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 2
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