參數(shù)資料
型號: CDBS0145
廠商: Comchip Technology Co., Ltd.
英文描述: SMD Schottky Barrier Diode
中文描述: 貼片肖特基二極管
文件頁數(shù): 1/2頁
文件大?。?/td> 61K
代理商: CDBS0145
Io = 100mA
V
R
= 45 Volts
CDBS0145
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 0805(2012) Standard package,
molded plastic.
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.0048 gram. (approximately)
SMD Schottky Barrier Diode
Unit
V
uA
pF
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Conditions
I
F
= 100 mA DC
V
R
= 45 V
f = 1MHz, and 10 VDC reverse voltage
Symbol
V
F
I
R
C
T
Min
Typ
10
Max
0.55
30
www.comchip.com.tw
COMCHIP
Page 1
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current , Surge peak
Power Dissipation
Storage temperature
Junction temperature
Conditions
Symbol
V
RRM
V
R
Io
I
FSM
P
D
T
STG
T j
Min
-40
-40
Max
50
45
100
250
+125
+125
Typ
1000
Unit
V
V
mA
mA
mW
Maximum Rating
( at T
A
= 25 unless otherwise noted )
C
Electrical Characteristics
( at T
A
= 25 unless otherwise noted )
C
C
C
0.087(2.20)
0.079(2.00)
0.016(0.40) Typ
0.055(1.40)
0.047(1.20)
0.043 (1.10)
0.035(0.90)
0.008(R0.20) Typ.
Dimensions in inches and (millimeter)
0805(2012)
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
RDS0208011-C
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