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參數(shù)資料
| 型號： | CD9581 |
| 英文描述： | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 100MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 40V的五（巴西）總裁| 100mA的一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 59K |
| 代理商： | CD9581 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL TRANSISTOR
CD9581
TO-92
CBE
General Purpose Transistor.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Operating & Storage Junction
Temperature Range
Lead Temperature for Soldering 1/16"
From Body, For 10 Seconds
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
VALUE
60
40
7.0
100
500
-65 to +125
UNIT
V
V
V
mA
mW
deg C
TL
280
deg C
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
200
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 +- 3 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter- Base Voltage
Collector Cut-off Current
SYMBOL
VCBO
VCEO*
VEBO
ICBO
ICEO
IEBO
hFE
TEST CONDITION
IC=10uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=40V, IE=0
VCE=35V, IB=0
VEB=7V, IC=0
IC=10mA,VCE=10V
IC=100uA,VCE=10V
MIN
60
40
7.0
-
-
-
150
50
-
MAX
-
-
-
50
1.0
200
300
-
0.22
UNIT
V
V
V
nA
uA
nA
Emitter Cut -off Current
Forward Current Transfer Ratio
Collector Emitter (Sat) Voltage
DYNAMIC CHARACTERISTICS
Cut off frequency
Noise Figure
VCE(Sat) * IC=50mA,IB=10mA
V
ft
NF
VCE=5V, IC=10mA
VCE=5V, IC=12uA
f=1kHz, Rs=k ohm
VCB=10V, f=1MHz
IC=0.5mA, VCE=5V,
f=50 kHz
100
-
350
12
MHz
dB
Fead Back Capacitance
Forward Current Transfer Ratio(A.C)
Cre
hfe
-
4.0
-
pF
100
*Pulse test 300us Duty Cycle=2%
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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