參數(shù)資料
型號: CD6105
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: NPN SILICON RF POWER TANSISTOR
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 1/1頁
文件大?。?/td> 22K
代理商: CD6105
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CES
I
C
= 10 mA
BV
EBO
I
E
= 5.0 mA
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 5.0 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
UNITS
V
V
mA
---
4.0
3.0
10
120
C
OB
V
CB
= 28 V
f = 1.0 MHz
35
40
pF
P
G
η
V
CC
= 28 V
P
OUT
= 30 W f = 400 MHz
9.0
65
70
dB
%
NPN SILICON RF POWER TRANSISTOR
CD6105
PACKAGE STYLE .280 4L STUD
DESCRIPTION:
The
ASI CD6105
is Designed for
Class C Amplifiers in 225 to 400 MHz
Military Communication Equipment.
FEATURES:
P
G
= 9.5 dB Typical at 400 MHz
Economical .280” Stud Package
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
5.0 A
V
CES
65 V
V
EBO
4.0 V
P
DISS
70 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
2.5 °C/W
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.285 / 7.24
.137 / 3.48
.007 / 0.18
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
K
.217 / 5.51
.220 / 5.59
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
C
B
E
E
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