參數資料
型號: CD4069-D14-T
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 通用總線功能
英文描述: INVERTER CIRCUIT CMOS IC
中文描述: 4000/14000/40000 SERIES, HEX 1-INPUT INVERT GATE, DIP14
封裝: DIP-14
文件頁數: 3/7頁
文件大小: 116K
代理商: CD4069-D14-T
CD4069
CMOS IC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-020,B
ABS OLUT E MAX IMUM RAT INGS
PARAMETER
SYMBOL
V
DD
V
IN
T
S
RATINGS
-0.5 ~ +18
-0.5 ~ V
DD
+0.5
-65 ~ +150
700
500
125
-20 ~ +85
-40 ~ +150
UNIT
V
V
DC Supply Voltage
Input Voltage
Storage Temperature Range
DIP-14
SOP-14
mW
mW
Power Dissipation
P
D
Junction Temperature
Operating Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
OPR
T
STG
RECOMMENDED OPERAT ING CONDIT IONS
(V
SS
=0V )
PARAMETER
SYMBOL
V
DD
V
IN
Ta
RATINGS
3 ~ 15
0 ~ V
DD
-40 ~ +85
UNIT
V
V
DC Supply Voltage
Input Voltage
Operating Temperature Range
DC ELECT RICAL CHARACT ERIS T ICS
(V
SS
=0V, Ta=25
, unless otherwise specified.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
1.0
2.0
4.0
0.05
0.05
0.05
UNIT
Quiescent Device Current
I
DD
V
DD
=5V, V
IN
=V
DD
or V
SS
V
DD
=10V, V
IN
=V
DD
or V
SS
V
DD
=15V, V
IN
=V
DD
or V
SS
|I
O
|<1μA
V
DD
=5V
V
DD
=10V
V
DD
=15V
|I
O
|<1μA
V
DD
=5V
V
DD
=10V
V
DD
=15V
|I
O
|<1μA
V
DD
=5V, V
OUT
=4.5V
V
DD
=10V, V
OUT
=9V
V
DD
=15V, V
OUT
=13.5V
|I
O
|<1μA
V
DD
=5V, V
OUT
=0.5V
V
DD
=10V, V
OUT
=1V
V
DD
=15V, V
OUT
=1.5V
V
DD
=5V, V
OUT
=0.4V
V
DD
=10V, V
OUT
=0.5V
V
DD
=15V, V
OUT
=1.5V
V
DD
=5V, V
OUT
=4.6V
V
DD
=10V, V
OUT
=9.5V
V
DD
=15V, V
OUT
=13.5V
V
DD
=15V, V
IN
=0V
V
DD
=15, V
IN
=15V
μA
Low Level Output Voltage
V
OL
0
0
0
V
High Level Output Voltage
V
OH
4.95
9.95
14.95
V
Low Level Input Voltage
V
IL
1.0
2.0
3.0
V
High Level Input Voltage
V
IH
4.0
8.0
12.0
0.44
1.1
3.0
-0.44
-1.1
-3.0
V
Low Level Output Current
(Note 3)
I
OL
0.88
2.25
8.8
-0.88
-2.25
-8.8
-10
-5
10
-5
mA
mA
High Level Output Current
(Note 3)
I
OH
Input Current
I
IN
-0.30
0.30
μA
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