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參數(shù)資料
| 型號(hào)： | CD2328AO |
| 英文描述： | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 30V的五（巴西）總裁| 1.5AI（丙）|至92 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | CD2328AO |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN COMPLEMENTARY SILICON EPITAXIAL TRANSISTOR
CD2328A
TO-92
BCE
3W AUDIO Output Amplifier Application.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
Tj, Tstg
VALUE
30
30
5.0
1.5
2.0
0.75
-55 to +150
UNIT
V
V
V
A
A
W
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter on Voltage
SYMBOL
VCEO
VCBO
VEBO
ICBO
IEBO
hFE*
VCE(Sat) * IC=1.5A, IB=30mA
VBE(on)*
IC=500mA, VCE=2V
TEST CONDITION
IC=10mA, IB=0
IC=100uA, IE=0
IE=1mA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
IC=500mA,VCE=2V
MIN
30
30
5.0
-
-
100
-
-
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
100
100
320
2.0
1.0
UNIT
V
V
V
nA
nA
V
V
Dynamic Characteristics
Output Capacitance
Cob VCB=10V, IE=0
f=1MHz
ft VCE=2V,IC=500mA,
-
-
-
30
48
120
-
-
-
pF
pF
MHz
Gain Bandwidth Product
CLASSIFICATION
hFE *
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
O
Y
100-200
160-320
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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