
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD214B-R350~R31000 Glass Passivated Rectifiers
Features
■
Lead free as standard
■
RoHS compliant*
■
Glass passivated chip
■
Low reverse leakage current
■
Low forward voltage drop
■
High current capability
General Information
Electrical Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Thermal Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Notes:
1 See Forward Derating Curve.
2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.
3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pad areas.
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip
DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass
Passivated Rectifier Diodes offer a forward current of 3.0 A with a choice of repetitive peak reverse voltage of 50 V up to 1000 V.
Bourns
Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
Parameter
Symbol
CD214B-R350~R31000
Unit
Operating Temperature Range
T
J
-65 to +175
°C
Storage Temperature Range
T
STG
-65 to +175
°C
Parameter
Symbol
CD214B-
R3400
Unit
R350
R3100
R3200
R3600
R3800
R31000
Maximum Repetitive
Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC
Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Max. Average Forward
Rectified Current
1
I(AV)
3.0
A
DC Reverse Current @
Rated DC Blocking Voltage
(@TJ= 25 °C)
IR
5.0
μA
DC Reverse Current @
Rated DC Blocking Voltage
(@TJ= 125 °C)
Typical Junction Capacitance
2
IR
50
μA
CJ
40
pF
Maximum Instantaneous
Forward Voltage @ 1 A
VF
1.0
V
Typical Thermal Resistance
3
R
θ
JL
13
°C/W
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC Method)
IFSM
115
A
*RHSCOMPIAN