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參數(shù)資料
| 型號(hào)： | CD2010-B160 |
| 廠商： | BOURNS INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | CD2010-B160 - Surface Mount Schottky Rectifier Diode |
| 中文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 379K |
| 代理商： | CD2010-B160 |
CD2010-B160 – Surface Mount Schottky Rectifier Diode
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
6
Features
■
Lead free device (RoHS compliant*)
■
Low profile
■
Low power loss, high efficiency
■
UL 94V-0 classification
Applications
■
High frequency switching power supplies
■
Inverters
■
Free wheeling
■
Polarity protection
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components. Bourns offers Schottky Rectifier Diodes for rectification applications, in
compact chip package 2010 size format, which offer PCB real estate savings and are
considerably smaller than most competitive parts. The Schottky Rectifier Diodes offer
a forward current of 1 A with a repetitive peak reverse voltage of 60 V.
Bourns
Chip Diodes conform to JEDEC standards, are easy to handle on standard
pick and place equipment and their flat configuration minimizes roll away.
*RHSCOMPIAN
Tin Plated
Connectors
FRP Substrate
and Epoxy
Underfill
Electrical Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Thermal Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Parameter
Symbol
Min.
Nom.
Max.
Unit
DC Blocking Voltage
V
DC
60
V
RMS Voltage
V
RMS
42
V
Repetitive Peak Reverse Voltage
V
RRM
60
V
Average Forward Rectified Current
1
I
(AV)
1.0
A
Instantaneous Forward Voltage @ I
F
= 1.0 A
V
F
0.52
0.58
V
Reverse Leakage Current @ rated VDC
(@TJ= 25 °C)
Reverse Leakage Current @ rated VDC
(@TJ= 100 °C)
I
R
0.5
mA
I
R
10
mA
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
50
A
Parameter
Symbol
Min.
Nom.
Max.
Unit
Thermal Resistance
R
θ
JA
R
θ
JL
75
17
°C/W
Junction Temperature Range
T
J
+125
°C
Storage Temperature Range
T
STG
-50
+25
+150
°C
Notes:
1 See Forward Derating Curve.
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