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參數(shù)資料
| 型號(hào)： | CD1585BC |
| 廠商： | Continental Device India Limited |
| 英文描述： | PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
| 中文描述： | 進(jìn)步黨平面外延硅晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 59K |
| 代理商： | CD1585BC |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CD1585BC
(9AW)
TO-92
BCE
Marking : CD
1585
BC
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
BVCBO
20
V
Collector Emitter Voltage
BVCEO
20
V
Emitter Base Voltage
BVEBO
6.0
V
Collector Current
IC
2.0
A
Collector Current Peak
ICP*
5.0
A
Collector Power Dissipation
PC
0.4
W
Operating And Storage Junction
Tj, Tstg
-55 to +150
deg C
Temperature Range
*Single Pulse Pw=10ms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Base Voltage
VCBO
IC=50uA, IE=0
20
-
V
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
20
-
V
Emitter Base Voltage
VEBO
IE=50uA, IC=0
6
-
V
Collector Cut off Current
ICBO
VCB=20V, IE=0
-
0.1
uA
ICEO
VCE=20V, IB=0
1
uA
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
0.1
uA
DC Current Gain
hFE
VCE=2V, IC=0.1A
250
-
500
VCE=2V, IC=2A
155
-
Collector Emitter Saturation Voltage
VCE(Sat)
IC=2A, IB=0.1A
-
1
V
Dynamic Characteristics
Transition Frequency
ft
VCE=2V,IC=0.5A,
-
150
-
MHz
f=100MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0
-
35
-
pF
f=1MHz
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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