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參數(shù)資料
| 型號： | CD13003F |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 156K |
| 代理商： | CD13003F |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CD13001
TO - 92
Plastic Package
ABSOLUTE MAXIMUM RATING (T
a
=25oC )
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Collector Power Dissipation
Operating and Storage Junction
Temperature Range
(1) Pulse Test: Pulse Width = 5ms, Duty Cycle<10%
SYMBOL VALUE
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
, T
stg
- 55 to +150
UNIT
V
V
V
A
500
400
9.0
0.5
1.5
900
mW
oC
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE
*
h
FE
V
CE(sat)
TEST CONDITION
I
C
=100
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=500V, I
E
= 0
V
CE
=400V, I
B
= 0
V
EB
=9V, I
C
=0
V
CE
=20V, I
C
=20mA
V
CE
=10V, I
C
=0.25mA
I
C
=50mA, I
B
=10mA
MIN
500
400
9
TYP
MAX
UNIT
V
V
V
μ
A
100
200
100
40
Emitter Cut off Current
DC Current Gain
μ
A
10
5
Collector Emitter Saturation
Voltage
Base Emitter Saturation Voltage
Transition Frequency
Fall Time
Storage Time
0.5
V
V
BE(sat)
f
T
t
f
t
s
I
C
=50mA, I
B
=10mA
V
CE
=20V,I
C
=20mA,f=1MHz
I
C
=50mA, I
B1
= -1
B2
=5mA
V
CC
=45V
1.2
V
8
MHz
μ
s
0.3
1.5
h
FE
Note: Product is pre selected in
DC current gain (Groups A to F).
CDIL reserves the right to ship
any of the groups according to
production availability.
MARKING
*
Classifications
A
B C
15-20 20-25
D
E
F
10-15
25-30
30-35
35-40
CD
13001
A
CD CD
13001 13001
B C
CD
13001
D
CD
13001
E
CD
13001
F
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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| CD13005 | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:TO-220 - Power Transistors and Darlingtons |
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