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參數(shù)資料
| 型號： | CD0402-T36LC |
| 廠商： | BOURNS INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | CD0402-TxxLC - TVS Diode Array Series |
| 中文描述： | 250 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 333K |
| 代理商： | CD0402-T36LC |
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD0402-TxxLC – TVS Diode Array Series
Features
■
Lead free as standard
■
RoHS compliant*
■
Protects 1 line
■
Bidirectional configuration
■
ESD protection
■
Low capacitance
Applications
■
Cell phones
■
PDAs and notebooks
■
Digital cameras
■
MP3 players and GPS
General Information
Electrical & Thermal Characteristics (@ TA= 25 °C Unless Otherwise Noted)
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD
protection applications, in 0402 chip package size format. The Transient Voltage
Supressor Array series offers a choice of voltage types ranging from 3 V to 36 V in a
bidirectional configuration. Bourns
Chip Diodes conform to JEDEC standards, are
easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
The Bourns
device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC
61000-4-5 (Surge) requirements.
Notes:
1. See Peak Pulse Power vs. Pulse Time.
2. See Pulse Wave Form.
3. Max. Leakage Current <5
μ
A @ 2.8 V.
4. Max. Leakage Current <500 nA @ 3.3 V.
All devices are bidirectional. Electrical Characteristics apply in both directions.
*RHSCOMPIAN
Parameter
Symbol
Value
Unit
Peak Pulse Power (t
p
= 8/20 μs)
1
P
PP
250
W
Operating Temperature
T
J
-55 C to 150 C
C
Storage Temperature
T
STG
-55 C to 150 C
C
CD0402-
Parameter
Symbol
T3.3LC
T05LC
T08LC
T12LC
T15LC
T24LC
T36LC
Unit
Min. Breakdown Voltage @ 1 mA
V
BR
4.0
6.0
8.5
13.3
16.7
26.7
40.0
V
Working Peak Voltage
V
WM
3.3
5.0
8.0
12.0
15.0
24.0
36.0
V
Maximum Clamping Voltage @ IP
2
V
F
7.0
11.0
13.4
19.0
24
43
64
V
Maximum Clamping Voltage
@ 8/20 μs VC@ IPP
V
F
12.5 V
@ 16 A
13.5 V
@ 15 A
18 V
@ 11 A
26.9 V
@ 7.4 A @ 5.8 A
34.5 V
50.6 V
@ 5 A @ 2.5 A
80 V
V
2
Maximum Leakage Current @ VWM
I
D
75
3
10
4
1
1
1
1
1
μ
A
Typical Capacitance @ 0 V, 1 MHz
C
70
35
32
30
25
20
18
pF
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