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參數(shù)資料
| 型號： | CC5551 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR |
| 中文描述： | npn型互補(bǔ)性的芯片高壓晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | CC5551 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR
CC5551
(9AW)
TO-92
BCE
MARKING : NCC
5551
High Voltage NPN Transistor for General Purpose and Telephony Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25°C
Derate Above 25°C
Power Dissipation @Tc=25°C
Derate Above 25°C
Junction Temperature
Storage Temperature
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
(1) R
th(j-a)
is measured with the device soldered into a typical printed circuit board
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
VALUE
160
180
6.0
600
625
5.0
1.5
12
150
-55 to +150
UNIT
V
V
V
mA
mW
mw/°C
W
mw/°C
°C
°C
P
D
T
j
T
stg
R
th(j-c)
R
th(j-a) (1)
125
357
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector-Cut off Current
SYMBOL TEST CONDITION
V
CEO
I
C
=1mA,I
B
=0
V
CBO
I
C
=100
μ
A.I
E
=0
V
EBO
I
E
=10
μ
A, I
C
=-0
I
CBO
V
CB
=160V, I
E
=0
MIN
160
180
6.0
-
TYP
-
-
-
-
MAX
-
-
-
50
UNIT
V
V
V
nA
T
a
=100°C
V
CB
=160V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=1mA,V
CE
=5V
I
C
=10mA,V
CE
=5V
I
C
=50mA,V
CE
=5V
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
-
-
-
-
-
-
-
-
-
-
-
50
50
-
320
-
0.15
0.2
1.0
1.0
μ
A
nA
Emitter-Cut off Current
DC Current Gain
I
EBO
h
FE*
80
80
30
-
-
-
-
Collector Emitter Saturation Voltage
V
CE(Sat) *
V
V
V
V
Base Emitter Saturation Voltage
V
BE(Sat) *
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 4
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