參數(shù)資料
型號: CBTU04083BS
廠商: NXP SEMICONDUCTORS
元件分類: 多路復(fù)用及模擬開關(guān)
英文描述: 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PQCC42
封裝: 3.50 X 9 MM, 0.85 MM HEIGHT, PLASTIC, SOT1144-1, VQFN-42
文件頁數(shù): 10/14頁
文件大小: 297K
代理商: CBTU04083BS
CBTU04083
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 16 July 2010
5 of 14
NXP Semiconductors
CBTU04083
1.8 V, wide bandwidth, 4 differential channel, 2 : 1 MUX/deMUX switch
8.
Limiting values
[1]
Human Body Model: ANSI/EOS/ESD-S5.1-1994, standard for ESD sensitivity testing, Human Body Model -
Component level; Electrostatic Discharge Association, Rome, NY, USA.
[2]
Charged Device Model: ANSI/EOS/ESD-S5.3-1-1999, standard for ESD sensitivity testing, Charged Device
Model - Component level; Electrostatic Discharge Association, Rome, NY, USA.
9.
Recommended operating conditions
10. Static characteristics
[1]
Typical values are at VDD = 1.8 V, Tamb =25 °C, and maximum loading.
[2]
Input leakage current is
±50 μA if differential pairs are pulled to HIGH and LOW.
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDD
supply voltage
0.5
+2.5
V
Tcase
case temperature
40
+85
°C
VESD
electrostatic discharge voltage
HBM
6000
V
CDM
1000
V
Table 5.
Recommended operating conditions
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
supply voltage
1.62
1.8
1.98
V
VI
input voltage
0.5
-
VDD
V
Tamb
ambient temperature
operating in free air
40
-
+85
°C
Table 6.
Static characteristics
VDD = 1.8 V ± 10 %; Tamb = 40 °C to +85 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
IDD
supply current
VDD = max.; VI =GND or VDD
--4
mA
IIH
HIGH-level input current
VDD = max.; VI =VDD
--
±5[2]
μA
IIL
LOW-level input current
VDD = max.; VI =GND
-
±5[2]
μA
VIH
HIGH-level input voltage
SEL pin
0.65VDD
--
V
VIL
LOW-level input voltage
SEL pin
0.5
-
0.15VDD
V
VIK
input clamping voltage
VDD = max.; II = 18 mA
-
0.7
1.2
V
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