參數(shù)資料
型號(hào): CBRHD06
廠商: Central Semiconductor Corp.
英文描述: High Density Surface Mount 0.5AMP Dual in Line Bridge Rectifier(重復(fù)峰值反向電壓600V,高密度表面安裝0.5 A雙列直插橋式整流器)
中文描述: 高密度表面貼裝0.5AMP雙行橋整流器(重復(fù)峰值反向電壓600V的,高密度表面安裝0.5甲雙列直插橋式整流器)
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 143K
代理商: CBRHD06
104
FEATURES:
Truly efficient use of board space, requires
only 42mm2 of board space vs. 120mm2 of board
space for industry standard 1.0 Amp surface
mount bridge rectifier.
50% higher density (amps/mm2) than the industry
standard 1.0 Amp surface mount bridge rectifier.
Glass passivated chips for high reliability.
BRIDGE
HD
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD series types are silicon full wave bridge rectifiers mounted
in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBRHD CBRHD CBRHD CBRHD
SYMBOL -02 -04 -06 -10* UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 1000
DC Blocking Voltage
VR
200 400 600 1000
RMS Reverse Voltage
VR(RMS) 140 280 420 700
Average Forward Current (TA=40°C)(1) IO
Average Forward Current (TA=40°C)(2) IO
Peak Forward Surge Current
IFSM
Operating and Storage
Junction Temperature
TJ,Tstg
V
V
V
A
A
A
0.5
0.8
30
-65 to +150
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VF
IR
IR
CJ
IF=400mA (Per Diode)
VR=Rated VRRM
VR=Rated VRRM, TA=125°C
VR=4.0V, f=1.0MHz
1.0
5.0
500
V
m
A
m
A
pF
20
(1) Mounted on a Glass-Epoxy P.C.B.
(2) Mounted on a Ceramic P.C.B.
*Available on special order, please consult factory.
CBRHD SERIES
HIGH DENSITY SURFACE MOUNT
AMP DUAL IN LINE
BRIDGE RECTIFIER
HDDIP CASE
Central
Semiconductor Corp.
TM
TM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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