參數(shù)資料
型號(hào): CAT9555WI-T1
廠商: ON Semiconductor
文件頁數(shù): 10/16頁
文件大小: 0K
描述: IC I/O EXPANDER I2C 16B 24SOIC
標(biāo)準(zhǔn)包裝: 1
接口: I²C,串行,SMBus
輸入/輸出數(shù): 16
中斷輸出:
頻率 - 時(shí)鐘: 400kHz
電源電壓: 2.3 V ~ 5.5 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 24-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 24-SOIC
包裝: 標(biāo)準(zhǔn)包裝
包括: POR
產(chǎn)品目錄頁面: 806 (CN2011-ZH PDF)
其它名稱: CAT9555WI-T1DKR
CAT9555WI-T2DKR
CAT9555WI-T2DKR-ND
CAT9555
http://onsemi.com
3
Table 1. PIN DESCRIPTION
SOIC / TSSOP
TQFN
Pin Name
Function
1
22
INT
Interrupt Output (open drain)
2
23
A1
Address Input 1
3
24
A2
Address Input 2
411
18
I/O0.0 I/O0.7
I/O Port 0.0 to I/O Port 0.7
12
9
VSS
Ground
1320
1017
I/O1.0 I/O1.7
I/O Port 1.0 to I/O Port 1.7
21
18
A0
Address Input 0
22
19
SCL
Serial Clock
23
20
SDA
Serial Data
24
21
VCC
Power Supply
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
VCC with Respect to Ground
0.5 to +6.5
V
Voltage on Any Pin with Respect to Ground
0.5 to +5.5
V
DC Current on I/O1.0 to I/O1.7, I/O0.0 to I/O0.7
±50
mA
DC Input Current
±20
mA
VCC Supply Current
160
mA
VSS Supply Current
200
mA
Package Power Dissipation Capability (TA = 25°C)
1.0
W
Junction Temperature
+150
°C
Storage Temperature
65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. RELIABILITY CHARACTERISTICS
Symbol
Parameter
Reference Test Method
Min
Units
VZAP (Note 1)
ESD Susceptibility
JEDEC Standard JESD 22
2000
V
ILTH (Note 1)
Latchup
JEDEC JESD78A
100
mA
1. This parameter is tested initially and after a design or process change that affects the parameter.
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