參數(shù)資料
型號(hào): CAT809TTBI-GT10
英文描述: 3-Pin Microprocessor Power Supply Supervisors
中文描述: 3引腳微處理器電源監(jiān)控
文件頁(yè)數(shù): 3/14頁(yè)
文件大小: 696K
代理商: CAT809TTBI-GT10
CAT803, CAT809, CAT810
3
Doc No. 3004, Rev. X
2007 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ELECTRICAL CHARACTERISTICS
V
CC
= Full range, T
A
= -40oC to +85oC unless otherwise noted. Typical values at T
A
= +25oC and V
CC
= 5V for the
L/M/J versions, V
CC
= 3.3V for the T/S versions, V
CC
= 3V for the R version and V
CC
= 2.5V for the Z version.
Parameter
V
CC
Range
Symbol
Conditions
T
A
= 0oC to +70oC
T
A
= -40oC to +85oC
Min
.0
.2
Typ
Max
5.5
5.5
20
5
4.70
4.75
4.45
4.50
4.06
4.0
3.
3.5
2.96
3.00
2.66
2.70
2.35
2.38
units
V
Supply Current
I
CC
T
A
= -40oC to +85oC
V
CC
< 5.5V, J/L/M
V
CC
< 3.6V, R/S/T/Z
T
A
= +25oC
T
A
= -40oC to +85oC
T
A
= +25oC
T
A
= -40oC to +85oC
T
A
= +25oC
T
A
= -40oC to +85oC
T
A
= +25oC
T
A
= -40oC to +85oC
T
A
= +25oC
T
A
= -40oC to +85oC
T
A
= +25oC
T
A
= -40oC to +85oC
T
A
= +25oC
T
A
= -40oC to +85oC
8
6
μA
Reset
Threshold
Voltage
V
TH
L Threshold
4.56
4.50
4.3
4.25
3.93
3.89
3.04
3.00
2.89
2.85
2.59
2.55
2.28
2.25
4.63
V
M Threshold
4.38
J Threshold
4.00
T Threshold
3.08
S Threshold
2.93
R Threshold
2.63
Z Threshold
2.32
AbSOLuTE MAXIMuM RATInGS
(1)
Any pin with respect to ground
Input Current, V
CC
Output Current, RESET, RESET
Rate of Rise, V
CC
Continuous Power Dissipation
Derate 2.2mW/oC above 70oC (SC70)
Derate 4mW/oC above 70oC (SOT23)
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (0 sec)
-0.3V to +6.0V
20mA
20mA
00V/μs
75 mW
320 mW
-40oC to +85oC
-65oC to +05oC
300oC
note:
() Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification
is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
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