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參數(shù)資料
| 型號(hào)： | CAT808NTBI-21T3 |
| 英文描述： | Low-Power Precision Voltage Detector |
| 中文描述： | 低功耗高精度電壓檢測器 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 202K |
| 代理商： | CAT808NTBI-21T3 |
CAT808
Doc. No. 3024 Rev. A
2
2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS
(1)
Parameters
Temperature under Bias
Storage Temperature
Voltage on any Pin with Respect to GND
(2)(3)
V
DD
with Respect to GND
Lead Soldering temperature (10 seconds)
TSOT-23-5
Power Dissipation
SOT-89
Ratings
-55 to +125
-65 to +150
-2.0 to V
DD
+ 2.0
-2.0 to 7.0
+300
250
500
Units
oC
oC
V
V
oC
mW
mW
RECOMMENDED OPERATING CONDITIONS
Parameters
V
DD
Operating Temperature Range
Ratings
+1.2 to +6.0
-40 to +85
Units
V
oC
DC ELECTRICAL CHARACTERISTICS
T
A
= -40oC to +85oC, V
DD
= 1.2V to 6.0V
Symbol
V
DET
V
DET
Parameter
Detection Voltage, 27
Conditions
T
A
= -40oC to +85oC
T
A
= -40oC to +85oC
V
DD
= 4.0V
V
DD
= 5.0V
V
DD
= 6.0V
Min Typ. Max
2.62 2.7 2.78
Units
Detection Voltage, 32
3.12 3.2 3.28
V
-
2.4
5
-
3.5
7
I
DD
Current Consumption
-
5
10
-
-
1
60
μA
V
DD
=1.2V
V
DD
=2.4V
0.6
2.9
-
-
1.4
5
-
-
I
OUT
Output SinkCurrent
V
DS
= 0.5V
mA
I
LEAK
T
PHL/LH
Δ
- V
DET
Δ
T
A
●
-V
DET
Output Leakage Current
Response Time
Detection Voltage
Temperature Coefficient
(4)
V
DS
= 5.0V, V
DD
= 5.0V
–
μA
μs
T
A
= -40oC to +85oC
-
±10 ±100 ppm/oC
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the devices at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and
reliability.
(2) The Minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20ns.
(3) Latch-up protection is provided for stresses up to 100mA on all pins from -1V to V
CC
+1V.
(4) The temperature change ratio in the detection voltage [ppm/°C] is calculated by using the following equation:
]
C
/o
ppm
[
000
,
000
,
×
V
-
T
V
DET
A
DET
Δ
Δ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CAT808NTBI-22-GT1 | Low-Power Precision Voltage Detector |
| CAT808NTBI-22-GT3 | Low-Power Precision Voltage Detector |
| CAT808NTBI-22T1 | Low-Power Precision Voltage Detector |
| CAT808NTBI-22T3 | Low-Power Precision Voltage Detector |
| CAT808NTBI-23-GT1 | Low-Power Precision Voltage Detector |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT808NTBI-22-GT1 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:Low-Power Precision Voltage Detector |
| CAT808NTBI-22-GT3 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:Low-Power Precision Voltage Detector |
| CAT808NTBI-22T1 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:Low-Power Precision Voltage Detector |
| CAT808NTBI-22T3 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:Low-Power Precision Voltage Detector |
| CAT808NTBI-23-GT1 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:Low-Power Precision Voltage Detector |
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