參數(shù)資料
型號(hào): CAT660
英文描述: 100mA CMOS Charge Pump Inverter/Doubler
中文描述: 100mA的CMOS電荷泵逆變器/倍增
文件頁(yè)數(shù): 2/16頁(yè)
文件大小: 497K
代理商: CAT660
CAT660
2
Doc. No. 5000, Rev. U
8
7
6
5
1
2
3
4
BOOST/FC
CAP+
GND
CAP-
V+
OSC
LV
OUT
CAT
660
8
7
6
5
1
2
3
4
BOOST/FC
CAP+
GND
CAP-
V+
OSC
LV
OUT
CAT
660
PIN DESCRIPTIONS
Circuit Configuration
Pin Number
1 Boost/FC
Name
Inverter Mode
Frequency Control for the internal oscilla-
tor. With an external oscillator BOOST/FC
has no effect.
Oscillator Frequency
Doubler Mode
Boost/FC
Oscillator Frequency
Open
10kHz typical
V+
80kHz typical, 40kHz minimum
2
CAP+
Charge pump capacitor. Positive terminal.
Same as inverter.
3
GND
Power supply ground.
Power supply. Positive voltage input.
4
CAP-
Charge pump capacitor. Negative terminal.
Same as inverter.
5
OUT
Output for negative voltage.
Power supply ground.
6
LV
LV must be tied to OUT for all input
voltages.
8
V+
Power supply. Positive voltage input.
Positive voltage output.
Same as inverter.
Low-Voltage selection pin. When the input
voltage is less than 3V, connect LV to GND.
For input voltages above 3V, LV may be
connected to GND or left open. If OSC is
driven externally, connect LV to GND.
Oscillator control input. An external capacitor
can be connected to lower the oscillator
frequency. An external oscillator can drive
OSC and set the chip operating frequency.
The charge-pump frequency is one-half the
frequency at OSC.
Same as inverter. Do not overdrive
OSC in doubling mode. Standard logic
levels will not be suitable. See the
applications section for additional
information.
7
OSC
10kHz typical, 5kHz minimum
80kHz typical, 40kHz minimum
PIN CONFIGURATION
SOIC Package (S, X)
8
7
6
5
1
2
3
4
BOOST/FC
CAP+
GND
CAP-
V+
OSC
LV
OUT
CAT
660
(Top View)
TDFN Package: 4mm x 4mm
0.8mm maximum height
TDFN Package (RD8, ZD8)
DIP Package (P)
ORDERING INFORMATION
Part Number
Package
Temperature Range
CAT660EPA
8 lead Plastic DIP
-40
°
C to 85
°
C
CAT660ESA
8-lead SOIC
-40
°
C to 85
°
C
CAT660ESA-TE13
8-lead SOIC, Tape & Reel
-40
°
C to 85
°
C
CAT660ERD8
8-pad TDFN
-40
°
C to 85
°
C
CAT660EVA
8-lead SOIC (Lead-free, Halogen-free)
-40
°
C to 85
°
C
CAT660EVA-TE13
8-lead SOIC (Lead-free, Halogen-free)
-40
°
C to 85
°
C
CAT660EZD8
8-pad TDFN (Lead-free, Halogen-free)
-40
°
C to 85
°
C
(Top View)
(Top View)
相關(guān)PDF資料
PDF描述
CAT660EPA 100mA CMOS Charge Pump Inverter/Doubler
CAT660ERD8 100mA CMOS Charge Pump Inverter/Doubler
CAT660ESA 100mA CMOS Charge Pump Inverter/Doubler
CAT660ESA-TE13 100mA CMOS Charge Pump Inverter/Doubler
CAT660EVA 100mA CMOS Charge Pump Inverter/Doubler
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