參數(shù)資料
型號: CAT525J
英文描述: 1-Mbit (64K x 16) Static RAM
中文描述: 數(shù)字電位器
文件頁數(shù): 2/12頁
文件大?。?/td> 82K
代理商: CAT525J
CAT525
2
Doc. No. 25078-00 4/01 - A M-1
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Resolution
8
Bits
Accuracy
INL
Integral Linearity Error
I
LOAD
= 10
μ
A T
R
= C
I
LOAD
= 10
μ
A T
R
= I
I
LOAD
= 40
μ
A T
R
= C
I
LOAD
= 40
μ
A T
R
= I
I
LOAD
= 10
μ
A T
R
= C
I
LOAD
= 10
μ
A T
R
= I
I
LOAD
= 40
μ
A T
R
= C
I
LOAD
= 40
μ
A T
R
= I
0.6
0.6
1.2
1.2
0.25
0.25
0.5
0.5
±
1
±
1
±
0.5
±
0.5
LSB
LSB
LSB
LSB
LSB
LSB
LSB
LSB
DNL
Differential Linearity Error
Logic Inputs
I
IH
I
IL
V
IH
V
IL
References
V
RH
V
RL
Z
IN
V
IN
/ R
IN
Logic Outputs
V
OH
V
OL
Input Leakage Current
Input Leakage Current
High Level Input Voltage
Low Level Input Voltage
V
IN
= V
DD
V
IN
= 0V
2
0
10
–10
V
DD
0.8
μ
A
μ
A
V
V
V
REF
H Input Voltage Range
V
REF
L Input Voltage Range
V
REF
H–V
REF
L Resistance
Input Resistance Match
2.7
GND
28
V
DD
V
V
k
%
V
DD
-2.7
±
1
±
0.5
High Level Output Voltage
Low Level Output Voltage
I
OH
= – 40
μ
A
I
OL
= 1 mA, V
DD
= +5V
I
OL
= 0.4 mA, V
DD
= +3V
V
DD
–0.3
0.4
0.4
V
V
V
ABSOLUTE MAXIMUM RATINGS
Supply Voltage*
V
DD
to GND ......................................–0.5V to +7V
Inputs
CLK to GND............................–0.5V to V
DD
+0.5V
CS to GND..............................–0.5V to V
DD
+0.5V
DI to GND ...............................–0.5V to V
DD
+0.5V
RDY/BSY to GND ...................–0.5V to V
DD
+0.5V
PROG to GND ........................–0.5V to V
DD
+0.5V
V
REF
H to GND ........................–0.5V to V
DD
+0.5V
V
REF
L to GND .........................–0.5V to V
DD
+0.5V
Outputs
D
0
to GND...............................–0.5V to V
DD
+0.5V
V
OUT
1– 4 to GND...................–0.5V to V
DD
+0.5V
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix) ...... 0
°
C to +70
°
C
Industrial (‘I’ suffix)...................... – 40
°
C to +85
°
C
Junction Temperature ..................................... +150
°
C
Storage Temperature ....................... –65
°
C to +150
°
C
Lead Soldering (10 sec max) .......................... +300
°
C
* Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Absolute
Maximum Ratings are limited values applied individually while
other parameters are within specified operating conditions,
and functional operation at any of these conditions is NOT
implied. Device performance and reliability may be impaired by
exposure to absolute rating conditions for extended periods of
time.
DC ELECTRICAL CHARACTERISTICS:
V
DD
= +2.7V to +5.5V, V
REF
H = V
DD
, V
REF
L = 0V, unless otherwise specified
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min
Max
Units
Test Method
V
ZAP(1)
I
LTH(1)(2)
NOTES:
1. This parameter is tested initially and after a design or process change that affects the parameter.
2. Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V
CC
+ 1V.
ESD Susceptibility
Latch-Up
2000
100
Volts
mA
MIL-STD-883, Test Method 3015
JEDEC Standard 17
相關(guān)PDF資料
PDF描述
CAT525 Configured Digitally Programmable Potentiometer (DPP⑩): Programmable Voltage Applications
CAT525JI 1-Mbit (64K x 16) Static RAM
CAT525P 1-Mbit (64K x 16) Static RAM
CAT521JI-TE13 1-Mbit (64K x 16) Static RAM
CAT521J-TE13 1-Mbit (64K x 16) Static RAM
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