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參數(shù)資料
| 型號(hào)： | CAT34WC02 |
| 英文描述： | 2K-Bit IIC Serial EEPROM(2K位（256 x 8位）IIC CMOS 串行EEPROM) |
| 中文描述： | 的2K位串行EEPROM國際進(jìn)口證（2K位（256 × 8位）國際進(jìn)口的CMOS串行EEPROM的） |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 87K |
| 代理商： | CAT34WC02 |
CAT34WC02
2
Doc. No. 25062-00 2/98 S-1
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias
Storage Temperature....................... –65
°
C to +150
°
C
Voltage on Any Pin with
Respect to Ground
(1)
........... –2.0V to +V
CC
+ 2.0V
V
CC
with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25
°
C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°
C
Output Short Circuit Current
(2)
........................ 100mA
–55
°
C to +125
°
C
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+ 2.0V for periods of less than 20ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V
CC
+1V.
(5) Standby Current (I
SB
) = 0
μ
A (<900nA).
CAPACITANCE
T
A
= 25
°
C, f = 1.0 MHz, V
CC
= 5V
Symbol
C
I/O(3)
Input/Output Capacitance (SDA)
C
IN(3)
Input Capacitance (A0, A1, A2, SCL)
Test
Max.
Units
Conditions
8
pF
V
I/O
= 0V
6
pF
V
IN
= 0V
RELIABILITY CHARACTERISTICS
Symbol
N
END(3)
T
DR(3)
V
ZAP(3)
I
LTH(3)(4)
Parameter
Min.
Max.
Units
Reference Test Method
Endurance
1,000,000
Cycles/Byte
MIL-STD-883, Test Method 1033
Data Retention
100
Years
MIL-STD-883, Test Method 1008
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
Latch-up
100
mA
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
V
CC
= +1.8V to +6.0V, unless otherwise specified.
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
I
CC
Power Supply Current (Read)
1
mA
f
SCL
= 100 KHz
I
CC
I
SB(5)
Power Supply Current (Write)
3
mA
f
SCL
= 100 KHz
Standby Current (V
CC
= 5.0V)
0
μ
A
μ
A
μ
A
V
V
IN
= GND or V
CC
I
LI
Input Leakage Current
1
V
IN
= GND to V
CC
I
LO
Output Leakage Current
1
V
OUT
= GND to V
CC
V
IL
Input Low Voltage
–1
V
CC
x 0.3
V
IH
Input High Voltage
V
CC
x 0.7
V
CC
+ 0.5
V
V
OL1
Output Low Voltage (V
CC
= 3.0V)
0.4
V
I
OL
= 3 mA
V
OL2
Output Low Voltage (V
CC
= 1.8V)
0.5
V
I
OL
= 1.5 mA
Limits
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| CAT34WC02J | 功能描述:電可擦除可編程只讀存儲(chǔ)器 USE 698-CAT34WC02JI RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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