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參數(shù)資料
| 型號： | CAT28C17AWI-20 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | PROM |
| 英文描述： | Parallel EEPROM, 16Kb, RDY/BSY Pin, SOIC |
| 中文描述： | 2K X 8 EEPROM 5V, 200 ns, PDSO28 |
| 封裝： | LEAD AND HALOGEN FREE, SOIC-28 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 507K |
| 代理商： | CAT28C17AWI-20 |
CAT28C17A
3
Doc. No. 1075, Rev. B
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55
°C to +125°C
Storage Temperature ....................... –65
°C to +150°C
Voltage on Any Pin with
Respect to Ground(2) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25
°C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°C
Output Short Circuit Current(3) ........................ 100 mA
D.C. OPERATING CHARACTERISTICS
VCC = 5V
±10%, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
ICC
VCC Current (Operating, TTL)
35
mA
CE = OE = VIL,
f = 1/tRC min, All I/O’s Open
I
VCC Current (Operating, CMOS)
25
mA
CE = OE = VILC,
f = 1/tRC min, All I/O’s Open
ISB
VCC Current (Standby, TTL)
1
mA
CE = VIH, All I/O’s Open
ISBC(6)
VCC Current (Standby, CMOS)
100
A
CE = VIHC,
All I/O’s Open
ILI
Input Leakage Current
–10
10
AVIN = GND to VCC
ILO
Output Leakage Current
–10
10
AVOUT = GND to VCC,
CE = VIH
VIH(6)
High Level Input Voltage
2
VCC +0.3
V
VIL(5)
Low Level Input Voltage
–0.3
0.8
V
VOH
High Level Output Voltage
2.4
V
IOH = –400
A
VOL
Low Level Output Voltage
0.4
V
IOL = 2.1mA
VWI
Write Inhibit Voltage
3.0
V
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min.
Max.
Units
Test Method
NEND(1)
Endurance
10,000
Cycles/Byte
MIL-STD-883, Test Method 1033
TDR(1)
Data Retention
10
Years
MIL-STD-883, Test Method 1008
VZAP(1)
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
ILTH(1)(4)
Latch-Up
100
mA
JEDEC Standard 17
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC +1V.
(5) VILC = –0.3V to +0.3V.
(6) VIHC = VCC –0.3V to VCC +0.3V.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28C256BL-12 | 制造商:ON Semiconductor 功能描述:EEPROM 256K 32KX8 120NS PDIP28 |
| CAT28C256G12 | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K 5V 120 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT28C256G-12 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT28C256G-12T | 功能描述:電可擦除可編程只讀存儲器 256K-Bit Para 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT28C256G15 | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K 5V 150 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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