參數(shù)資料
型號: CAT28C17AGI-20
廠商: ON SEMICONDUCTOR
元件分類: PROM
英文描述: Parallel EEPROM, 16Kb, RDY/BSY Pin, PLCC
中文描述: 2K X 8 EEPROM 5V, 200 ns, PQCC32
封裝: LEAD AND HALOGEN FREE, PLASTIC, LCC-32
文件頁數(shù): 8/10頁
文件大?。?/td> 507K
代理商: CAT28C17AGI-20
CAT28C17A
7
Doc. No. 1075, Rev. B
ADDRESS
CE
WE
OE
I/O7
DIN = X
DOUT = X
tOE
tOEH
tWC
tOES
Byte Write
A write cycle is executed when both CE and WE are low,
and OE is high. Write cycles can be initiated using either
WE or CE, with the address input being latched on the
falling edge of WE or CE, whichever occurs last. Data,
conversely, is latched on the rising edge of WE or CE,
whichever occurs first. Once initiated, a byte write cycle
automatically erases the addressed byte and the new
data is written within 10 ms.
Figure 5. Byte Write Cycle [CE Controlled]
ADDRESS
CE
OE
WE
RDY/BUSY
tAS
DATA IN
DATA VALID
tAH
tWC
tOEH
tDH
tDS
tOES
tDL
tCH
tCS
tCW
tDB
DATA OUT
HIGH-Z
Figure 6. DATA Polling
DATA Polling
DATA polling is provided to indicate the completion of a
byte write cycle. Once a byte write cycle is initiated,
attempting to read the last byte written will output the
complement of that data on I/O7 (I/O0–I/O6 are indeter-
minate) until the programming cycle is complete. Upon
completion of the self-timed byte write cycle, all I/O’s will
output true data during a read cycle.
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