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參數資料
| 型號： | CAT25C256SI-TE13 |
| 元件分類： | EEPROM |
| 英文描述： | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| 中文描述： | 64K的8K的× 8電池電壓的CMOS E2PROM的 |
| 文件頁數： | 9/11頁 |
| 文件大?。?/td> | 79K |
| 代理商： | CAT25C256SI-TE13 |
9
CAT25C128/256
Doc. No. 25088-00 1/01
Figure 7. WRSR Timing
address will remain constant.The only restriction is that
the 64 bytes must reside on the same page. If the
address counter reaches the end of the page and clock
continues, the counter will “roll over” to the first address
of the page and overwrite any data that may have been
written. The CAT25C128/256 is automatically returned
to the write disable state at the completion of the write
cycle. Figure 8 illustrates the page write sequence.
To write to the status register, the WRSR instruction
should be sent. Only Bit 2, Bit 3 and Bit 7 of the status
register can be written using the WRSR instruction.
Figure 7 illustrates the sequence of writing to status
register.
During an internal write cycle, all commands will be
ignored except the RDSR (Read Status Register) in-
struction.
The Status Register can be read to determine if the write
cycle is still in progress. If Bit 0 of the Status Register is
set at 1, write cycle is in progress. If Bit 0 is set at 0, the
device is ready for the next instruction
Page Write
The CAT25C128/256 features page write capability.
After the initial byte the host may continue to write up to
64 bytes of data to the CAT25C128/256. After each byte
of data is received, six lower order address bits are
internally incremented by one; the high order bits of
Figure 6. Write Instruction Timing
Figure 8. Page Write Instruction Timing
SK
SI
SO
0
0
0
0
0
0
1
0
ADDRESS
D7
D6
D5
D4
D3
D2
D1
D0
0
1
2
3
4
5
6
7
8
21
22
23
24
25
26
27
28
29
30
31
CS
OPCODE
DATA IN
HIGH IMPEDANCE
0
1
2
3
4
5
6
7
8
10
9
11
12
13
14
SCK
SI
MSB
HIGH IMPEDANCE
DATA IN
15
SO
CS
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
1
OPCODE
SK
SI
SO
0
0
0
0
0
0
1
0
ADDRESS
Data
Byte 1
0
1
2
3
4
5
6
7
8
21
22
23 24-31
32-39
Data
Byte 2
Data
Byte 3
Data Byte N
7..1
CS
OPCODE
0
24+(N-1)x8-1..24+(N-1)x8 24+Nx8-1
DATA IN
HIGH IMPEDANCE
Note: Dashed Line= mode (1, 1) — — — —
Note: Dashed Line= mode (1, 1) — — — —
Note: Dashed Line= mode (1, 1) — — — —
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PDF描述 |
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| CAT25C256S-TE13 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| CAT25C256U14A-TE13 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| CAT25C256U14I-TE13 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| CAT25C256U14-TE13 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| CAT25C256U20A-TE13 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CAT25C256X | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT25C256X-1.8 | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT25C256XA | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT25C256XE-TE13 | 制造商:ON Semiconductor 功能描述:EEPROM Serial-SPI 256K-Bit 32K x 8 3.3V/5V 8-Pin SOIC EIAJ T/R |
| CAT25C256XI | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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