參數(shù)資料
型號: CAT25020VA-1.8
廠商: ON SEMICONDUCTOR
元件分類: PROM
英文描述: 256 X 8 SPI BUS SERIAL EEPROM, PDSO8
封裝: LEAD AND HALOGEN FREE, SOIC-8
文件頁數(shù): 9/11頁
文件大?。?/td> 73K
代理商: CAT25020VA-1.8
7
CAT25010/20/40
Doc. No. 1006, Rev. L
Figure 4. Read Instruction Timing
Figure 5. RDSR Instruction Timing
Note: Dashed Line= mode (1, 1) – ––––
SK
SI
SO
0000001
1
BYTE ADDRESS*
0123456789
10
20
21
22
23
24
25
26
27
28
29
30
7
6
5
4
3
2
1
0
*Please check the instruction set table for address
CS
OPCODE
DATA OUT
MSB
HIGH IMPEDANCE
0
1
2
345
67
8
10
911
12
13
14
SCK
SI
DATA OUT
MSB
HIGH IMPEDANCE
OPCODE
SO
7
6
5
4
3
2
1
0
CS
00
0
00
1
0
1
to provide clock pulses. The internal address pointer is
automatically incremented to the next higher address
after each byte of data is shifted out. When the highest
address is reached, the address counter rolls over to
0000h allowing the read cycle to be continued indefinitely.
The read operation is terminated by pulling the
CS high.
To read the status register, RDSR instruction should be
sent. The contents of the status register are shifted out
on the SO line. The status register may be read at any
time even during a write cycle.
Read sequece is
illustrated in Figure 4. Reading status register is illustrated
in Figure 5.
WRITE Sequence
The CAT25010/20/40 powers up in a Write Disable
state. Prior to any write instructions, the WREN instruction
must be sent to CAT25010/20/40. The device goes into
Write enable state by pulling the
CS low and then
clocking the WREN instruction into CAT25010/20/40.
The
CS must be brought high after the WREN instruction
to enable writes to the device. If the write operation is
initiated immediately after the WREN instruction without
CS being brought high, the data will not be written to the
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