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參數(shù)資料
| 型號(hào)： | CAT24C64ZE-T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | PROM |
| 英文描述： | 8K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 |
| 封裝： | 3 X 3 MM, HALOGEN FREE, BFR FREE AND ROHS COMPLIANT, MO-187, MSOP-8 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 175K |
| 代理商： | CAT24C64ZE-T3 |
CAT24C64
http://onsemi.com
2
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Storage Temperature
–65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 1)
–0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than 0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than 1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
Endurance
1,000,000
Program/Erase Cycles
TDR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C.
Table 3. D.C. OPERATING CHARACTERISTICS
(VCC = 1.8 V to 5.5 V, TA = 40°C to +125°C and VCC = 1.7 V to 5.5 V, TA = 40°C to +85°C, unless otherwise specied.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICCR
Read Current
Read, fSCL = 400 kHz
1
mA
ICCW
Write Current
Write, fSCL = 400 kHz
2
mA
ISB
Standby Current
All I/O Pins at GND or VCC
TA = 40°C to +85°C
VCC ≤ 3.3 V
1
mA
TA = 40°C to +85°C
VCC > 3.3 V
3
TA = 40°C to +125°C
5
IL
I/O Pin Leakage
Pin at GND or VCC
2
mA
VIL
Input Low Voltage
0.5
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage
VCC < 2.5 V, IOL = 3.0 mA
0.4
V
VOL2
Output Low Voltage
VCC < 2.5 V, IOL = 1.0 mA
0.2
V
Table 4. PIN IMPEDANCE CHARACTERISTICS
(VCC = 1.8 V to 5.5 V, TA = 40°C to +125°C and VCC = 1.7 V to 5.5 V, TA = 40°C to +85°C, unless otherwise specied.)
Symbol
Parameter
Conditions
Max
Units
SDA I/O Pin Capacitance
VIN = 0 V
8
pF
Input Capacitance (other pins)
VIN = 0 V
6
pF
WP Input Current
VIN < VIH, VCC = 5.5 V
130
mA
VIN < VIH, VCC = 3.3 V
120
VIN < VIH, VCC = 1.8 V
80
VIN > VIH
2
Address Input Current
(A0, A1, A2)
Product Rev F
VIN < VIH, VCC = 5.5 V
50
mA
VIN < VIH, VCC = 3.3 V
35
VIN < VIH, VCC = 1.8 V
25
VIN > VIH
2
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100
and JEDEC test methods.
5. When not driven, the WP, A0, A1 and A2 pins are pulled down to GND internally. For improved noise immunity, the internal pulldown is relatively
strong; therefore the external driver must be able to supply the pulldown current when attempting to drive the input HIGH. To conserve power,
as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x VCC), the strong pulldown reverts to a weak current source.
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