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參數(shù)資料
| 型號(hào)： | CAT22C10LA-20-TE13 |
| 英文描述： | 256-Bit Nonvolatile CMOS Static RAM |
| 中文描述： | 256位非易失性的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 514K |
| 代理商： | CAT22C10LA-20-TE13 |
CAT22C10
3
Doc. No. 1082, Rev. O
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55
°
C to +125
°
C
Storage Temperature....................... –65
°
C to +150
°
C
Voltage on Any Pin with
Respect to Ground
(2)
..............-2.0 to +VCC +2.0V
V
CC
with Respect to Ground ................ -2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25
°
C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°
C
Output Short Circuit Current
(3)
........................ 100 mA
RELIABILITY CHARACTERISTICS
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
Symbol
Parameter
Min.
Max.
Units
Reference Test Method
N
END(1)
Endurance
100,000
Cycles/Byte
MIL-STD-883, Test Method 1033
T
DR(1)
Data Retention
10
Years
MIL-STD-883, Test Method 1008
V
ZAP(1)
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
I
LTH(1)(4)
Latch-Up
100
mA
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
V
CC
= +5V
±
10%, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
Max.
Unit
Conditions
I
CC
Current Consumption
(Operating)
40
mA
All Inputs = 5.5V
T
A
= 0
°
C
All I/O’s Open
I
SB
Current Consumption
(Standby)
30
μ
A
CS = V
CC
All I/O’s Open
I
LI
Input Current
10
μ
A
μ
A
0
≤
V
IN
≤
5.5V
0
≤
V
OUT
≤
5.5V
I
LO
Output Leakage Current
10
V
IH
High Level Input Voltage
2
V
CC
V
V
IL
Low Level Input Voltage
0
0.8
V
V
OH
High Level Output Voltage
2.4
V
I
OH
= –2mA
V
OL
Low Level Output Voltage
0.4
V
I
OL
= 4.2mA
V
DH
RAM Data Holding Voltage
1.5
5.5
V
V
CC
CAPACITANCE
T
A
= 25
°
C, f = 1.0 MHz, V
CC
= 5V
Symbol
Parameter
Max.
Unit
Conditions
C
I/O(1)
Input/Output Capacitance
10
pF
V
I/O
= 0V
C
IN(1)
Input Capacitance
6
pF
V
IN
= 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from -1V to V
CC
+1V.
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| CAT22C10P-20-TE13 | 256-Bit Nonvolatile CMOS Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT22C10LA-30-TE13 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10LE20 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10LE30 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10LI20 | 功能描述:NVRAM 256bit (64x4) 5V RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CAT22C10LI-20 | 制造商:ON Semiconductor 功能描述:IC NVSRAM 256BIT 200NS DIP-18 |
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