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參數(shù)資料
| 型號： | CAT22C10JI-30-TE13 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 107K |
| 代理商： | CAT22C10JI-30-TE13 |
1
CAT22C10
256-Bit Nonvolatile CMOS Static RAM
FEATURES
s Single 5V Supply
s Fast RAM Access Times:
–200ns
–300ns
s Infinite E2PROM to RAM Recall
s CMOS and TTL Compatible I/O
s Power Up/Down Protection
s 100,000 Program/Erase Cycles (E2PROM)
s Low CMOS Power Consumption:
–Active: 40mA Max.
–Standby: 30
A Max.
s JEDEC Standard Pinouts:
–18-pin DIP
–16-pin SOIC
s 10 Year Data Retention
s Commercial, Industrial and Automotive
Temperature Ranges
DESCRIPTION
The CAT22C10 NVRAM is a 256-bit nonvolatile memory
organized as 64 words x 4 bits. The high speed Static
RAM array is bit for bit backed up by a nonvolatile
E2PROM array which allows for easy transfer of data
from RAM array to E2PROM (STORE) and from
E2PROM to RAM (RECALL). STORE operations are
completed in 10ms max. and RECALL operations typi-
cally within 1.5
s. The CAT22C10 features unlimited
RAM write operations either through external RAM
PIN CONFIGURATION
PIN FUNCTIONS
Pin Name
Function
A0–A5
Address
I/O0–I/O3
Data In/Out
WE
Write Enable
CS
Chip Select
RECALL
Recall
STORE
Store
VCC
+5V
VSS
Ground
NC
No Connect
writes or internal recalls from E2PROM. Internal false
store protection circuitry prohibits STORE operations
when VCC is less than 3.0V.
The CAT22C10 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles (E2PROM)
and has a data retention of 10 years. The device is
available in JEDEC approved 18-pin plastic DIP and 16-
pin SOIC packages.
SOIC Package (J)
DIP Package (P)
1998 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
NC
A4
A3
A2
Vss
A1
CS
STORE
A0
NC
Vcc
A5
I/O3
I/O2
I/O1
I/O0
WE
RECALL
1
2
3
4
5
6
7
8
9
14
13
11
10
12
15
16
17
18
1
2
3
4
5
6
7
8
14
13
11
10
9
12
15
16
A1
A2
A3
A4
A0
A5
Vcc
I/O4
I/O3
I/O2
I/O1
Vss
WE
CS
STORE
RECALL
22C10 F01
22C10 F02
Doc. No. 25018-0A 2/98 N-1
This Material Copyrighted by Its Respective Manufacturer
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CAT22C10P-20 | NVRAM (EEPROM Based) |
| CAT22C10P-30 | NVRAM (EEPROM Based) |
| CAT24C01BRI-1.8TE13 | Serial EEPROM |
| CAT24C01BRITE13 | Serial EEPROM |
| CAT24C01BRTE13 | Serial EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT22C10L-20 | 功能描述:NVRAM 256bit (64x4) 5V RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CAT22C10L-20-TE13 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10L-30 | 制造商:ON Semiconductor 功能描述:256-BIT N V CMOS STATIC RAM - Rail/Tube |
| CAT22C10L-30-TE13 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10LA-20-TE13 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
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