參數(shù)資料
型號: C67078-S3135-A2
廠商: SIEMENS AG
英文描述: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance)
中文描述: SIPMOS功率晶體管(N通道增強(qiáng)模式雪崩級的dv /額定的胸苷超低電阻)
文件頁數(shù): 1/9頁
文件大?。?/td> 214K
代理商: C67078-S3135-A2
Semiconductor Group
1
07/96
BUZ 342
SIPMOS
Power Transistor
N channel
Enhancement mode
Avalanche-rated
dvdtrated
Ultra low on-resistance
175°C operating temperature
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 342
V
DS
50 V
I
D
60 A
R
DS(on
)
0.01
Package
TO-218 AA
Ordering Code
C67078-S3135-A2
Maximum Ratings
Parameter
Continuous drain current
T
C
= 150 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 60 A, V
DD
= 25 V, R
GS
= 25
L = 128 μH, T
j
= 25 °C
Reverse diode dvdt
I
S
= 0 A, V
DS
= 0 V, di
F
/dt= 0 A/μs
T
jmax
= 0 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
I
D
Values
Unit
A
60
I
Dpuls
240
E
AS
460
mJ
dvdt
kV/μs
V
GS
P
tot
±
20
V
W
400
-55 ... + 175
-55 ... + 175
0.37
75
E
55 / 175 / 56
T
j
T
stg
R
thJC
R
thJA
°C
K/W
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