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參數(shù)資料
| 型號(hào)： | C67078-A1401-A2 |
| 廠商： | SIEMENS AG |
| 英文描述： | SIPMOS Power Transistor (N channel Enhancement mode FREDFET) |
| 中文描述： | SIPMOS功率晶體管（N通道增強(qiáng)模式FREDFET） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 338K |
| 代理商： | C67078-A1401-A2 |
Semiconductor Group
509
BUZ 205
Electrical Characteristics
at
T
j
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static characteristics
Drain-source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage
V
GS
=
V
DS
,
I
D
= 1 mA
Zero gate voltage drain current
V
DS
= 400 V,
V
GS
= 0 V
T
j
=
25 C
T
j
= 125 C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-source on-resistance
V
GS
= 10 V,
I
D
= 4.0 A
V
(BR) DSS
400
–
–
V
V
GS (th)
2.1
4.0
4.0
I
DSS
–
–
20
100
250
1000
μ
A
I
GSS
–
10
100
nA
R
DS (on)
–
0.9
1.0
Dynamic characteristics
Forward transconductance
V
DS
≥
2 x
I
D
x
R
DS(on)max
,
I
D
= 4.0 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on time
t
on
, (
t
on
=
t
d (on)
+
t
r
)
V
DD
= – 30 V,
V
GS
= 10 V,
I
D
= 2.7 A,
R
GS
= 50
g
fs
1.7
2.9
–
S
C
iss
–
1500
2000
pF
C
oss
–
120
180
C
rss
–
35
60
t
d (on)
t
r
t
d (off)
t
f
–
30
45
ns
–
40
60
Turn-off time
t
off
, (
t
off
=
t
d (off)
+
t
f
)
V
DD
= – 30 V,
V
GS
= 10 V,
I
D
= 2.7 A,
R
GS
= 50
–
110
140
–
50
65
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|---|---|
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| C67078-A1600-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:main ratings |
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| C67078-A1602-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:main ratings |
| C67078-A1603-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:main ratings |
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