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參數(shù)資料
| 型號(hào)： | C62702-C748 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage) |
| 中文描述： | 自動(dòng)對(duì)焦進(jìn)步黨硅晶體管（高電流增益高集電極電流低集電極發(fā)射極飽和電壓） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 126K |
| 代理商： | C62702-C748 |
Semiconductor Group
1
PNP Silicon AF Transistor
BC 369
5.91
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
1
E
BC 369
C62702-C748
–
TO-92
2
C
3
B
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Symbol
Values
20
25
5
Unit
V
V
CE0
Peak collector current
Base current
Peak base current
I
CM
2
100
200
I
B
mA
Collector current
I
C
1
A
Junction temperature
Storage temperature range
T
j
150
– 65 … + 150
C
Total power dissipation,
T
C
= 90 C
2)
P
tot
0.8 (1)
W
T
stg
V
CB0
Thermal Resistance
Junction - ambient
2)
Junction - case
3)
R
th JA
≤
156
K/W
V
EB0
I
BM
R
th JC
≤
75
1)
For detailed information see chapter Package Outlines.
2)
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm
×
10 mm large copper area for
the collector terminal,
R
thJA
= 125 K/W and thus
P
tot max
= 1 W at
T
A
= 25 C.
3)
Mounted on Al heat sink 15 mm
×
25 mm
×
0.5 mm.
G
High current gain
G
High collector current
G
Low collector-emitter saturation voltage
G
Complementary type: BC 368 (NPN)
1
2
3
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| C62702-C853 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
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| C62702-C855 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
| C62702-C941 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Darlington Transistors (High current gain High collector current) |
| C62702-C942 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Darlington Transistors (High current gain High collector current) |
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