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參數(shù)資料
| 型號： | C52 |
| 英文描述： | 8 bit equality comparator |
| 中文描述： | 混合信號CMOS工藝和專門模擬 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 33K |
| 代理商： | C52 |
5 Micron CMOS Process Family
Double Poly / Single Metal
10
μ
m Poly and Metal I Pitch
Features
Process parameters
The
5μ
m process is a double poly/double metal CMOS process with
an operating voltage range from 5 to 12 volts.
(13
Volts Maximum Operating Voltage.)
Description
min. typ. max.
Pwell
2700
Pfield in Pwell
1000
2000
3000
N+
6
10
14
P+
70
90
110
Poly gate
14
20
26
Poly capacitor
30
55
80
Metal I
0.032
Resistances (
/sq.)
min.
typ.
max.
Condition
NPN vertical
275
Vce = 5
Volts
Bipolar gain
min. typ. max.
Inter-poly
0.35
0.50
0.65
Gate oxide
0.41
0.43
0.46
N+ Junction
0.34
P+ Junction
0.14
Capacitances (fF/
μ
m
2
)
5 MICRON - 12 volts
Units
Conditions
N Channel
min. typ. max.
P Channel
min. typ. max.
Vt (50x
5μ
m)
0.40
0.65
0.90
0.40
0.65
0.90
V
saturation
Ids (50x
5μ
m)
20
6
μ
A/
μ
m
Vds=Vgs=3v
Body Factor (50x50
μ
m)
1.2
0.5
√
v
Bvdss
18
24
18
24
V
Ids=1
μ
A
Field Threshold
18
>30
18
25
V
Ids = 14
μ
A
L Effective
1.8
2.8
μ
m
L drawn =
5μ
m
MOSFET Electrical Parameters
5μ
m
12 volts
Units
Metal I pitch (width/space)
5 / 5
μ
m
Poly pitch (width/space)
5 / 5
μ
m
Contact
5x5
μ
m
Via
5x5
μ
m
Gate geometry
5
μ
m
P-well junction depth
6.3
μ
m
N+ junction depth
2.0
μ
m
P+ junction depth
1.4
μ
m
Gate oxide thickness
800
Inter poly oxide thick.
700
For More Information:
DALSA Semiconductor Sales
18 Boulevard de l’Aéroport
Bromont, Québec, Canada
J2L 1S7
Tel :
(450) 534-2321 ext. 1448
(800) 718-9701
(450) 534-3201
email: dalsasales@dalsasemi.com
Fax
www.dalsasemi.com
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