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參數(shù)資料
| 型號： | C470XB500-S3000-A |
| 廠商： | Cree, Inc. |
| 英文描述： | XBright㈢ Power Chip LED |
| 中文描述： | XBright㈢功率貼片發(fā)光二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 200K |
| 代理商： | C470XB500-S3000-A |
Copyright 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, GSiC and XBright are registered trademarks, and XB and XB500 are trademarks of Cree, Inc.
CPR3CS Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at T
A
= 5°C
Note
DC Forward Current
C
xxx
XB500-S
x
x00-A
150mA
Note 2
Peak Forward Current (1/10 duty cycle @ 1kHz)
200mA
LED Junction Temperature
125°C
Reverse Voltage
5 V
Operating Temperature Range
-40°C to +85°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)
Note 3
1000V
Electrostatic Discharge Classification (MIL-STD-883E)
Note 3
Class 2
Typical Electrical/Optical Characteristics at T
A
= 5°C, If = 5mA
Note
Part Number
Forward Voltage (V
f
, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(
λ
D
, nm)
Min.
Typ.
Max.
Max.
Typ.
C460XB500-S3500-A
3.0
3.5
4.0
2
21
C470XB500-S3000-A
3.0
3.5
4.0
2
22
C505XB500-S2000-A
3.0
3.5
4.0
2
30
C527XB500-S1500-A
3.0
3.5
4.0
2
35
Mechanical Specifications
C
xxx
XB500-S000-A
Description
Dimension
Tolerance
P-N Junction Area (μm)
448 x 448
± 25
Top Area (μm)
325 x 325
± 25
Bottom Area (μm)
500 x 500
± 50
Chip Thickness (μm)
250
± 25
Au Bond Pad Diameter (μm)
120
± 10
Au Bond Pad Thickness (μm)
1.2
± 0.5
Back Contact Metal Area (μm)
376 x 376
± 25
Back Contact Metal Options/Thickness (μm)
1.7
± 0.3
Notes:
1.
Maximum ratings are package dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant
for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package
to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 125 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are
within the range of average expected by manufacturer in large quantities and are provided for information only. All measurements
were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using
Illuminance E.
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C.
Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the
chip.
XB500 chips are shipped with the junction side up, requiring die transfer prior to die attach.
Specifications are subject to change without notice.
2.
3.
4.
5.
6.
7.
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相關代理商/技術參數(shù) |
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