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參數(shù)資料
| 型號(hào)： | C40C |
| 英文描述： | Inertial sensor: 2axis - 2g/6g linear accelerometer |
| 中文描述： | 混合信號(hào)CMOS工藝和專門模擬 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | C40C |
Process Parameters
4
μ
m
10 volts
4
μ
m
15 volts
Units
Metal I pitch (width/space)
4 / 4
4 / 4
μ
m
Metal II pitch (width/space)
3 / 4
3 / 4
μ
m
Poly pitch (width/space)
4 / 4
4 / 4
μ
m
Contact
4 x 4
4 x 4
μ
m
Via
3 x 3
3 x 3
μ
m
Gate geometry
4.0
4.0
μ
m
P-well junction depth
5.7
7.0
μ
m
N+ junction depth
1.5
1.4
μ
m
P+ junction depth
0.90
0.95
μ
m
Gate oxide thickness
640
800
Inter poly oxide thick.
800
625
4 Micron CMOS Process Family
Features
Double Poly / Double Metal
8 μm Poly and Metal Pitch
10 Volts Maximum Operating Voltage
15 Volts High Voltage Option
Isolated Vertical PNP Bipolar Module
Description
Dalsa Semiconductor’s 4μm process is a double poly/double
metal CMOS process with an operating voltage range of 5 to 10
volts. In addition, a high voltage option is also available in
which a special drain structure allows the maximum operating
voltage to be increased to 18 volts. No compromises are made
with packing density since all high voltage gates are drawn at
4μm. Also, an Isolated Vertical PNP bipolar module with good
gain characteristics and high BVceo can be implemented on
both options.
MOSFET Electrical parameters
Process parameters
Electrical
Parameters
4 MICRON - 10 volts
4 MICRON - 15 volts
Units
Conditions
N Channel
min. typ. max.
P Channel
min. typ. max.
N Channel
min. typ. max.
P Channel
min. typ. max.
Vt (50x
4μ
m)
0.4
0.7
0.9
0.4
0.7
0.9
0.6
0.9
1.2
0.8
1.1
1.4
V
saturation
Ids (50x
4μ
m)
32
17
94
37
μA/μm
10V : Vds=Vgs= 3v
15V : Vds=Vgs=7.5v
Body factor
0.8
0.4
1.3
0.5
√
v
Bvdss
15
>20
15
>20
20
27
20
22
V
10V : Ids=1μA
15V : Ids=20nA
Subthres. slope
114
90
108
80
mV/dec.
Vds=0.1v
Field threshold
12
34
12
25
18
24
18
22
V
Ids = 14 μA
L effective
1.6
2.6
1.9
2.6
μm
L drawn = 4μm
For More Information:
DALSA Semiconductor Sales
18 Boulevard de l’Aéroport
Bromont, Québec, Canada
J2L 1S7
Tel :
(450) 534-2321 ext. 1448
(800) 718-9701
(450) 534-3201
email: dalsasales@dalsasemi.com
Fax
www.dalsasemi.com
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| C40D | MEMS inertial sensor: 2-axis - ± 2g/± 6g linear accelerometer |
| C410 | MILITARY SPECIFCATIONS ON BACK |
| C410C104J1G5CA | Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-23 |
| C420C104J1G5CA | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; No. of Contacts:26; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Gender:Male |
| C430C104J1G5CA | MILITARY SPECIFCATIONS ON BACK |
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