- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄366616 > C30D 4 MBIT (512KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM PDF資料下載
參數(shù)資料
| 型號(hào)： | C30D |
| 英文描述： | 4 MBIT (512KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM |
| 中文描述： | 混合信號(hào)CMOS工藝和專門(mén)模擬 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | C30D |
3
μ
m
5 volts & 3 volts
min. typ. max.
Inter-poly
0.44
0.54
0.63
Gate oxide
0.69
0.73
0.78
N+ Junction
0.17
P+ Junction
0.12
Capacitances (fF/
μ
m
2
)
3
μ
m - 5 volts
min. typ. max.
NPN vertical
700
Bipolar gain
1
1
Test condition : Vce = 5 volts
3
μ
m
5 volts & 3 volts
min. typ. max.
Pwell
17000
Pfield in Pwell
2400
3600
4800
N+
20
28
35
P+
80
100
120
Poly gate
15
23
30
Poly capacitor
75
100
125
Metal I
0.038
Metal II
0.038
Resistances (
/sq.)
Note: These values are for guidance only. Many of them can be adjusted to suit customer requirements.
For full process specifications contact a Dalsa Semicoonductor sales office or representative.
I
Vds (volts)
FIG 1 : I-V Characteristics for a 50x
3μ
m N-MOSFET
(3
μ
m 5 volts process)
5
Vgs = 2 volts
Vgs = 3 volts
Vgs = 4 volts
Vgs = 5 volts
4
3
2
1
0
0
1
2
3
4
5
FIG 3 : Subthreshold Characteristics at Vds=0.1 volts
for a 50x3
μ
m N-MOSFET (3
μ
m 5 volts Process)
10
-03
Vgs (volts)
I
I
m
A
10
-13
10
-12
10
-11
10
-10
10
-09
10
-08
10
-07
10
-06
10
-05
10
-04
0
0.5
1.0
1.5
2.0
100
75
50
25
FIG 4 : Subthreshold Characteristics at Vds=-0.1 volts
for a 50x3
μ
m P-MOSFET (3
μ
m 5 volts Process)
Vgs (volts)
I
I
m
A
10
-13
10
-12
10
-11
10
-10
10
-09
10
-08
10
-07
10
-06
10
-05
10
-04
0
-2.0
-36
-30
-24
-18
-12
-6
-0
-0.5
-1.0
-1.5
I
Vds (volts)
FIG 2 : I-V Characteristics for a 50x
3μ
m P-MOSFET
(3
μ
m 5 volts process)
Vgs = -2 volts
Vgs = -3 volts
Vgs = -4 volts
Vgs = -5 volts
-2.0
-1.5
-1.0
-0.5
0
0
-1
-2
-3
-4
-5
0
3 Micron CMOS Process Family(cont’d)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| C3ENPA1-DS | 5.0 or 3.3V, 256Kbit (32Kbit x 8) ZEROPOWER® SRAM |
| C3ENPB0-DS | 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM |
| C3F189AD | 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM |
| C3GD | 5V, 64Kbit (8Kbit x 8) ZEROPOWER® SRAM |
| C5GDS | 4-BIT MAGNITUDE COMPARATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C30DRT | 制造商:SILABS 制造商全稱:SILABS 功能描述:INSULATOR MATERIAL: SEEPART NUMBER CODING |
| C30DRX | 制造商:SILABS 制造商全稱:SILABS 功能描述:BOARD INSERTION FORCE: 16 OZ MAX PER CONTACT PAIR WHEN USING A .062 TEST BLADE |
| C30DRY | 制造商:SILABS 制造商全稱:SILABS 功能描述:PLATING: SEE PART NUMBER CODING OPERTING |
| C30F | 功能描述:保險(xiǎn)絲 CANADIAN FUSE UNIT RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險(xiǎn)絲類型:Fast Acting 保險(xiǎn)絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485 |
| C30FBS | 功能描述:熔絲座 FUSEHOLDER RoHS:否 制造商:Littelfuse 產(chǎn)品: 電流額定值:30 A 電壓額定值:1000 VDC 極數(shù):1 系列: 安裝風(fēng)格:DIN Rail 端接類型: 軸類型: 工作溫度范圍: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。