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| 型號(hào)： | C30902E |
| 廠商： | PerkinElmer Inc. |
| 英文描述： | ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles |
| 中文描述： | 硅雪崩光電二極管 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 232K |
| 代理商： | C30902E |
Electrical Characteristics
1
at T
A
= 22°C
C30902E, C309021E
Min
Typ
C30902S, C30921S
Min
Typ
Max
Max
Units
Breakdown voltage, V
BR
Temperature Coefficient of
VRfor Constant Gain
Gain
Responsivity:
At 900 nm
At 830 nm
Quantum Efficiency:
At 900 nm
At 830 nm
Dark Current, I
d
-
225
-
-
225
-
V
0.5
-
0.7
150
0.8
-
0.5
-
0.7
250
0.8
-
V/°C
55
70
65
77
-
-
92
117
108
128
-
-
A/W
A/W
-
-
-
60
77
-
-
-
-
-
60
77
-
-
%
%
A
1.5x10
-8
(Figure 6)
3x10
-8
1x10
-8
(Figure 6)
3x10
-8
Noise Current, i
n
:
2
f = 10 kHz,
f = 1.0 Hz
-
2.3x10
-13
(Figure 3)
1.6
5x10
-13
-
1.1x10
-13
(Figure 3)
1.6
2x10
-13
A/Hz
1/2
Capacitance, C
d
Rise Time, t
r
:
RL= 50
,
λ
= 830 nm,
10% to 90% points
Fall Time:
RL= 50
,
λ
= 830 nm,
90% to 10% points
Geiger Mode
(See Appendix)
Dark Count Rate at 5% Photon
Detection Probability
3
(830 nm):
22°C
-25°C
Voltage Above VBRfor 5% Photon
Detection Probability
3
(830 nm)
(See Figure 8)
Dead-Time Per Event
(See Appendix)
After-Pulse Ratio at 5% Photon
Detection Probability (830 nm)
22°C
4
-
2
-
2
pF
-
0.5
0.75
-
0.5
0.75
ns
-
0.5
0.75
-
0.5
0.75
ns
-
-
-
-
-
-
-
-
15,000
350
30,000
700
cps
cps
-
-
-
-
2
-
V
-
-
-
-
300
-
ns
-
-
-
-
2
15
%
Note 1. At the DC reverse operating voltage VRsupplied with the device and a light spot diameter of 0.25 mm (C30902E, S) or 0.10 mm (C30921E, S). Note that a specific value
of VRis supplied with each device. When the photodiode is operated at this voltage, the device will meet the electrical characteristic limits shown above. The voltage value will be
Note 2. The theoretical expression for shot noise current in an avalanche photodiode is in= (2q (Ids+ (IdbM2+ PoRM) F) Bw)1/2where q is the electronic charge, Idsis the dark
surface current, Idbis the dark bulk current, F is the excess noise factor, M is the gain, Pois the optical power on the device, and Bw, is the noise bandwidth. For these devices F =
0.98 (2-1/M) + 0.02 M. (Reference: PP Webb, RJ McIntyre, JJ Conradi, "RCAReview", Vol. 35 p. 234, (1974)).
Note 3. The C30902S and C30921S can be operated at a substantially higher Detection Probabilities. See Appendix.
Note 4. After-Pulse occurring 1 microsecond to 60 seconds after main pulse.
C30902E, C30902S, C30921E, C30921S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C30902EH | 制造商:Excelitas Technologies Corporation 功能描述:PHOTODIODE AVALANCHE |
| C30902S | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:Silicon Avalanche Photodiodes |
| C30904E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30905E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30908E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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