參數(shù)資料
型號(hào)： C30831
廠商： PerkinElmer Inc.
英文描述： N-Type Silicon PIN Photodetectors
中文描述： N型硅PIN光電探測(cè)器
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 140K
代理商： C30831
unless otherwise specified
R
= 45 Volts (typical), 22°C)
2
Type C30810
Typ
Type C30822
Typ
Type C30831
Typ
Units
Min
Max
Min
Max
Min
Max
Breakdown Voltage, V
BR
Responsivity:
At 900 nm
At 1060 nm
Quantum Efficiency:
At 900 nm
At 1060 nm
Dark Current, i
d
:
See Figure 2
At V
R
= 10V
At V
R
= 45V
Noise Current, I
n
:
See Figure 3
f = 1000 Hz,
f = 1.0 Hz
Noise Equivalent Power (NEP):
f = 1000 Hz,
f = 1.0 Hz
At 900 nm
At 1060 nm
Capacitance, C
d
:
See Figure 4
Rise Time, t
r
:
RL = 50
, λ
= 900 nm,
10% to 90% points
Fall Time:
RL = 50
, λ
= 900 nm,
10% to 90% points
100
-
-
100
-
-
100
-
-
V
0.5
0.1
0.6
0.15
-
-
0.5
0.1
0.6
0.15
-
-
0.5
0.1
0.6
0.15
-
-
A/W
A/W
70
12
83
17
-
-
-
-
83
17
-
-
-
-
83
17
-
-
%
%
-
-
8x10
-8
3x10
-7
4x10
-7
1.5x10
-6
-
-
1x10
-8
5x10
-8
5x10
-8
2.5x10
-7
-
-
1x10
-9
1x10
-8
5x10
-9
5x10
-8
A
A
-
3x10
-13
2.1x10
-12
-
1.3x10
-13
9x10
-13
-
6x10
-14
4.2x10
-13
A/Hz
1/2
-
-
-
4.5x10
-13
2x10
-12
70
3.6x10
-12
1.6x10
-11
90
-
-
-
2x10
-13
8x10
-13
17
1.5x10
-12
7x10
-12
20
-
1
-
1x10
-13
4x10
-13
2
8x10
-13
3.2x10
-12
2.5
W/Hz
1/2
W/Hz
1/2
pF
-
12
17
-
7
12
-
3
5
ns
-
20
30
-
10
15
-
6
10
ns
Note 2. The recommended range of reverse operating voltage VRat TA= 22°C is 0 to 50 volts. However, when the devices are operated in the photovoltaic mode, i.e., at VR= 0
volts, some of the electrical characteristics will differ from those shown.
Figure 2. Typical Dark Current vs. Ambient Temperature
Figure 1. Typical Spectral Responsivity Characteristic
C30807, C30808, C30809, C30810, C30822, C30831
Electrical Characteristics at TA= 22°C At a DC Reverse Operating Voltage (VR) = 45 Volts
2
,
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