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參數(shù)資料
| 型號： | C30737P-500 |
| 廠商： | PerkinElmer Inc. |
| 英文描述： | Epitaxial Silicon Avalanche Photodiode |
| 中文描述： | 硅雪崩光電二極管外延 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 101K |
| 代理商： | C30737P-500 |
Diameter
Gain @ 800nm
Responsivity @ 800nm
Temperature Coefficient (constant gain)
Dark Current
Noise Current: f=10kHz,
F=1.0KhZ
Capacitance
Rise Time
optoelectronics.perkinelmer.com
Electrical Characteristics
C30737 Series
Absolute Maximum Ratings
Page 3
C30737E-230
Typ
0.23
160
100
50
0.6
10
0.2
1.5
<0.3
C30737E-500
Typ
0.5
160
100
50
0.6
15
0.3
3
0.3
Storage Temperature
Operating Temperature
Min
-55
-30
Typ
Max
100
85
Min
-55
-30
Typ
Max
100
85
Unit
°
C
°
C
C30737E-230
C30737E-500
Diameter
Breakdown Voltage
Gain @ 800nm
Responsivity @ 800nm
Temperature Coefficient (constant gain)
Dark Current
Noise Current: f=10kHz,
F=1.0KhZ
Capacitance
Rise Time
C30737P-230
Typ
0.23
160
100
45
0.6
10
0.2
1.5
<0.3
C30737P-500
Typ
0.5
160
100
45
0.6
15
0.4
3.4
0.3
Min
Max
Min
Max
Unit
mm
Volts
200
200
A/W
V/
°
C
nA
pA/
√
Hz
pF
nsec
Plastic Package
Storage Temperature
Operating Temperature
Min
-40
-20
Typ
Max
85
70
Min
-40
-20
Typ
Max
85
70
Unit
°
C
°
C
Plastic Package
C30737P-230
C30737P-500
Min
Max
Min
Max
Unit
mm
Volts
200
200
A/W
V/
°
C
nA
pA/
√
Hz
pF
nsec
Hermetic Package
Hermetic Package
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