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參數(shù)資料
| 型號(hào)： | C30665 |
| 廠(chǎng)商： | PerkinElmer Inc. |
| 英文描述： | Large-Area InGaAs Photodiodes |
| 中文描述： | 大面積銦鎵砷光電二極管 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 255K |
| 代理商： | C30665 |
Specifications (at VR= VOP(typical), 22°C)
Parameter
C30642
Typ
C30665
Typ
Units
Min
Max
Min
Max
Active Diameter
Responsivity At 850 nm
At 1300 nm
At 1550 nm
Shunt Resistance (VR= 10 mV)
1
Dark Current
Spectral Noise Current (10 kHz, 1.0 Hz)
Capacitance At VR= 0V
At VR= 2.0V (typical)
Bandwidth (-3 dB, RL= 50)
Linearity
2
Available package types
2.0
0.20
0.90
0.95
25
10
3
0.03
300
150
20
+11
D15
3.0
0.20
0.90
0.95
10
25
3
0.04
1000
400
3.0
+11
D15
mm
A/W
A/W
A/W
M
nA
pA/√Hz
pF
pF
MHz
dBm
-
0.10
0.80
0.85
2
0.10
0.80
0.85
1
0.15
500
0.20
1250
Operating Ratings
Parameter
C30642
Typ
C30665
Typ
Units
Min
Max
Min
Max
Operating Voltage
Breakdown Voltage
Maximum Forward Current
Maximum Photocurrent
Power Dissipation
Storage Temperature
Operating Temperature
0
50
5
0
50
5
V
V
mA
mA
mW
°C
°C
15
10
10
100
250
125
85
10
100
250
125
85
-60
-40
-80
-40
Note 1. Selected higher shunt resistance devices are available to special order.
Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR= VOP(typ).
Note 3. At VR= 2.0V
Figure 2. Typical Shunt Resistance as a Function of Temperature.
Figure 1. Typical Responsivity vs. Wavelength.
C30619, C30641, C30642, C30665
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