參數(shù)資料
型號： C20B
英文描述： Turbo 2 ultrafast high voltage rectifier
中文描述： 混合信號CMOS工藝和專門模擬
文件頁數(shù)： 2/2頁
文件大小： 47K
代理商： C20B
2
μ
m 5 volts
min. typ. max.
NPN vertical
300
Bipolar gain
1
1
Test condition : Vce = 5 volts
2
μ
m
5 volts & 3 volts
min. typ. max.
Temp. coef.
(
/s
q
/
o
C)
Pwell
13000
140
Pfield in Pwell
3000
3600
4200
32
N+
35
45
55
.06
P+
80
100
120
.15
Poly gate
15
20
25
.02
Poly capacitor
75
100
125
.06
Metal I
0.038
Metal II
0.038
2
μ
m
5 volts & 3 volts
min. typ. max.
Inter-poly
.62
.73
.84
Gate oxide
0.99
1.06
1.15
N+ Junction
.195
P+ Junction
.138
Resistances (
/sq.)
Note: These values are for guidance only. Many of them can be adjusted to suit customer requirements.
For full process specifications contact a Dalsa Semiconductor sales office or representative.
I
Vds (volts)
I
Vds (volts)
Vgs (volts)
Vgs (volts)
I
I
10
-13
10
-12
10
-11
10
-10
10
-09
10
-08
10
-07
10
-06
10
-05
10
-04
10
-03
180
150
120
90
60
30
0
I
μ
A
10
-13
10
-12
10
-11
10
-10
10
-09
10
-08
10
-07
10
-06
10
-05
10
-04
I
μ
A
-60
-50
-40
-30
-20
-10
0
Vgs = -2 volts
Vgs = -3 volts
Vgs = -4 volts
Vgs = -5 volts
Vgs = 2 volts
Vgs = 3 volts
Vgs = 4 volts
Vgs = 5 volts
8
7
6
5
4
3
2
1
0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
0
1
2
3
4
5
0
-1
-2
-3
-4
-5
0
0.5
1.0
1.5
2.0
0
-0.5
-1.0
-1.5
-2.0
Capacitances (fF/
μ
m
2
)
FIG 1: I-V Characteristics for a 50x2
μ
m N-MOSFET
(2
μ
m 5 volts process)
FIG 2: I-V Characteristics for a 50x2
μ
m P-MOSFET
(2
μ
m 5 volts process)
FIG 3: Subthreshold Characteristics at Vds=0.1 volts
for a 50x2
μ
m N-MOSFET (2
μ
m 5 volts Process)
FIG 4: Subthreshold Characteristics at Vds=-0.1 volts
for a 50x2
μ
m P-MOSFET (2
μ
m 5 volts Process)
2 Micron CMOS Process Family (cont’d)
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