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參數(shù)資料
| 型號： | C1573B |
| 廠商： | Panasonic Corporation |
| 英文描述： | Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification) |
| 中文描述： | 硅npn型三重擴散（對于高擊穿電壓一般放大龍門式） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | C1573B |
1
Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SC1573 and 2SA879
I
Features
G
High collector to emitter voltage V
CEO
.
G
High transition frequency f
T
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
5.9
±
0.2
2.54
±
0.15
0.7
±
0.1
4.9
±
0.2
8
±
0
0
+
–
1
±
0
3
0.45
+0.2
–0.1
1.27
1.27
0.45
+0.2
–0.1
1
3
2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
250
300
400
200
300
400
7
100
70
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
C
C
2SC1573
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output
capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 12V, I
E
= 0
I
C
= 100
μ
A, I
B
= 0
I
E
= 1
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
200
300
400
5
7
30
50
typ
80
5
4
max
2
220
1.2
10
8
Unit
μ
A
V
V
V
MHz
pF
*
h
FE
Rank classification
*2SC1573 for Ranks Q and R only
2SC1573
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
Rank
P
Q
R
h
FE
30 ~ 100
60 ~ 150
100 ~ 220
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