參數(shù)資料
型號: C1004
廠商: IMP INC.
英文描述: Process C1004
中文描述: 工藝C1004
文件頁數(shù): 2/2頁
文件大?。?/td> 32K
代理商: C1004
18
C1004-4-98
Physical Characteristics
VGS = 5.0V
VGS = 4.0V
VGS = 3.0V
VGS = 2.0V
VGS = 1.0V
0
5.0
35.0
28.0
21.0
14.0
1.0
2.0
3.0
4.0
ID vs VD, W/L = 20/1.2
N-ch Transistor IV Characteristics of a 20/1.2 device
7.0
0
D
D
Drain Voltage (V) V
DS
VGS = –5.0V
VGS = –4.0V
VGS = –3.0V
VGS = –2.0V
0
–5.0
–15.0
–12.0
–9.0
–6.0
–1.0
–2.0
–3.0
–4.0
ID vs VD, W/L = 20/1.2
P-ch Transistor IV Characteristics of a 20/1.2 device
–3.0
0
D
D
Drain Voltage (V) V
DS
Starting Material
Starting Mat. Resistivity
Typ. Operating Voltage
Well Type
Metal Layers
Poly Layers
Contact Size
Via Size
Metal-1 Width/Space
Metal-2 Width/Space
Gate Poly Width/Space
P <100>
7-8.5
-cm
5V
N-well
2
1
1.2x1.2
μ
m
1.2x1.2
μ
m
1.4 / 1.2
μ
m
2.0 / 1.4
μ
m
1.0 / 1.4
μ
m
N+/P+ Width/Space
N+ To P+ Space
Contact To Poly Space
Contact Overlap Of Diffusion
Contact Overlap Of Poly
Metal-1 Overlap Of Contact
Metal-1 Overlap Of Via
Metal-2 Overlap Of Via
Minimum Pad Opening
Minimum Pad-to-Pad Spacing
Minimum Pad Pitch
2.0 / 1.2
μ
m
7.0
μ
m
0.8
μ
m
0.7
μ
m
0.7
μ
m
0.7
μ
m
0.7
μ
m
0.7
μ
m
65x65
μ
m
5.0
μ
m
80.0
μ
m
Metal 2
Metal 1
SIO
2
LTO
n
+
n
+
p
n
+
p
+
p
Field Oxide
N
S
P
N-well
D
C
D
L
P
S
S
p
C
p
+
substrate
p
epi
p
+
p
+
LTO
Process C1004
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