- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369643 > BZX79B68 (GE Security, Inc.) surface mount silicon Zener diodes PDF資料下載
參數(shù)資料
| 型號(hào)： | BZX79B68 |
| 廠商： | GE Security, Inc. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 硅表面貼裝齊納二極管 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 61K |
| 代理商： | BZX79B68 |
2002 Feb 27
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
FEATURES
Total power dissipation: max. 500 mW
Two tolerance series:
±
2%, and approx.
±
5%
Working voltage range: nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24
±
2% (BZX79-B) and
approx.
±
5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
Fig.1
Simplified outline (SOD27; DO-35) and
symbol.
The diodes are type branded.
handbook, halfpage
MAM239
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
Device mounted on a printed circuit-board without metallization pad; lead length max.
Tie-point temperature
≤
50
°
C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
I
ZSM
continuous forward current
non-repetitive peak reverse current
see Tables 1 and 2 A
250
mA
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge
T
amb
= 50
°
C; note 1
T
amb
= 50
°
C; note 2
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.3
P
tot
total power dissipation
400
500
40
mW
mW
W
P
ZSM
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
T
stg
T
j
65
65
+200
+200
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA; see Fig.4
0.9
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BZX79B6V2 | surface mount silicon Zener diodes |
| BZX79B51 | surface mount silicon Zener diodes |
| BZX79B56 | surface mount silicon Zener diodes |
| BZX79B6V8 | surface mount silicon Zener diodes |
| BZX79B75 | surface mount silicon Zener diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BZX79-B68 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Voltage regulator diodes |
| BZX79B68 A0G | 功能描述:DIODE ZENER 68V 500MW DO35 制造商:taiwan semiconductor corporation 系列:- 包裝:帶盒（TB） 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱值）（Vz）:68V 容差:±2% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:240 Ohms 不同?Vr 時(shí)的電流 - 反向漏電流:47.6mA @ 50mV 不同 If 時(shí)的電壓 - 正向（Vf:1.5V @ 100mA 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:5,000 |
| BZX79B68 R0 | 制造商:SKMI/Taiwan 功能描述:DO-35;ZENER 500MW 68V |
| BZX79-B68 T/R | 功能描述:穩(wěn)壓二極管 DIODE ZENER 2 PCT TAPE AXIAL RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| BZX79-B68,113 | 功能描述:穩(wěn)壓二極管 DIODE ZENER 2 PCT RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。