參數(shù)資料
型號: BZX79-F39
廠商: GE Security, Inc.
元件分類: 參考電壓二極管
英文描述: surface mount silicon Zener diodes
中文描述: 硅表面貼裝齊納二極管
文件頁數(shù): 2/12頁
文件大小: 61K
代理商: BZX79-F39
2002 Feb 27
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
FEATURES
Total power dissipation: max. 500 mW
Two tolerance series:
±
2%, and approx.
±
5%
Working voltage range: nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24
±
2% (BZX79-B) and
approx.
±
5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
Fig.1
Simplified outline (SOD27; DO-35) and
symbol.
The diodes are type branded.
handbook, halfpage
MAM239
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
Device mounted on a printed circuit-board without metallization pad; lead length max.
Tie-point temperature
50
°
C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
I
ZSM
continuous forward current
non-repetitive peak reverse current
see Tables 1 and 2 A
250
mA
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge
T
amb
= 50
°
C; note 1
T
amb
= 50
°
C; note 2
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.3
P
tot
total power dissipation
400
500
40
mW
mW
W
P
ZSM
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
T
stg
T
j
65
65
+200
+200
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA; see Fig.4
0.9
V
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