參數(shù)資料
型號(hào): BZX55C5V1CSM
英文描述: 12 A Snubberless", logic level and standard triacs
中文描述: 參考
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 69K
代理商: BZX55C5V1CSM
BZX55B...
Vishay Telefunken
Rev. 3, 01-Apr-99
1 (6)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85604
Silicon Epitaxial Planar Z–Diodes
Features
Very sharp reverse characteristic
Low reverse current level
Low noise
Very high stability
Available with tighter tolerances
V
Z
–tolerance
±
2%
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
T
j
= 25 C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
l=4mm, T
L
=25 C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
C
C
Maximum Thermal Resistance
T
j
= 25 C
Parameter
Junction ambient
Test Conditions
Symbol
R
thJA
Value
300
Unit
K/W
l=4mm, T
L
=constant
Electrical Characteristics
T
j
= 25 C
Parameter
Forward voltage
Test Conditions
I
F
=100mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
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