參數(shù)資料
型號: BZX55B
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon Epitaxial Planar Z-Diode(功率損耗500mW的硅外延平面型齊納二極管)
中文描述: 硅外延平面穩(wěn)壓二極管(500mW的功率損耗的硅外延平面型齊納二極管)
文件頁數(shù): 2/6頁
文件大?。?/td> 69K
代理商: BZX55B
BZX55B...
Vishay Telefunken
Rev. 3, 01-Apr-99
2 (6)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85604
Type
V
Znom
V
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
I
ZT
for V
ZT
and r
zjT
mA
V
5
2.64 to 2.76
5
2.94 to 3.06
5
3.24 to 3.36
5
3.52 to 3.68
5
3.82 to 3.98
5
4.22 to 4.38
5
4.60 to 4.80
5
5.00 to 5.20
5
5.48 to 5.72
5
6.08 to 6.32
5
6.66 to 6.94
5
7.35 to 7.65
5
8.04 to 8.36
5
8.92 to 9.28
5
9.80 to 10.20
5
10.78 to 11.22
5
11.76 to 12.24
5
12.74 to 13.26
5
14.70 to 15.30
5
15.70 to 16.30
5
17.64 to 18.36
5
19.60 to 20.40
5
21.55 to 22.45
5
23.5 to 24.5
5
26.4 to 27.6
5
29.4 to 30.6
5
32.4 to 33.6
5
35.3 to 36.7
2.5
38.2 to 39.8
2.5
42.1 to 43.9
2.5
46.1 to 47.9
2.5
50.0 to 52.0
2.5
54.9 to 57.1
2.5
60.8 to 63.2
2.5
66.6 to 69.4
2.5
73.5 to 76.5
r
zjk
at I
ZK
I
R
and I
R
at V
R
A
A
2)
< 10
< 50
< 4
< 40
< 2
< 40
< 2
< 40
< 2
< 40
< 1
< 20
< 0.5
< 10
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 2
< 0.1
< 5
< 0.1
< 5
< 0.1
< 5
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
TK
VZ
%/K
BZX55B...
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
V
1
1
1
1
1
1
1
1
1
2
3
5
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
< 8
< 7
< 7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0.05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0,12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
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PDF描述
BZX55B10 Silicon Epitaxial Planar Z-Diodes
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BZX55B56 Silicon Epitaxial Planar Z-Diodes
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BZX55B10 A0G 功能描述:DIODE ZENER 10V 500MW DO35 制造商:taiwan semiconductor corporation 系列:- 包裝:帶盒(TB) 零件狀態(tài):在售 電壓 - 齊納(標(biāo)稱值)(Vz):10V 容差:±2% 功率 - 最大值:500mW 阻抗(最大值)(Zzt):15 Ohms 不同?Vr 時的電流 - 反向漏電流:100nA @ 7.5V 不同 If 時的電壓 - 正向(Vf:1V @ 100mA 工作溫度:-55°C ~ 175°C(TJ) 安裝類型:通孔 封裝/外殼:DO-204AH,DO-35,軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:5,000