參數(shù)資料
型號: BZW04P110
英文描述: High current MOSFET driver
中文描述: TRANSZORB瞬態(tài)電壓抑制器
文件頁數(shù): 1/6頁
文件大小: 120K
代理商: BZW04P110
1/6
BZW04-5V8/376
BZW04-5V8B/376B
TRANSIL
TM
I
PEAK PULSE POWER : 400 W (10/1000
μ
s)
I
STAND-OFF VOLTAGE RANGE :
From 5.8V to 376 V
I
UNI AND BIDIRECTIONAL TYPES
I
LOW CLAMPING FACTOR
I
FAST RESPONSE TIME
I
UL RECOGNIZED
FEATURES
DO-15
Symbol
Parameter
Value
Unit
P
PP
Peak pulse power dissipation (see note 1)
Tj initial = Tamb
400
W
P
Power dissipation on infinite heatsink
T
amb
= 75°C
1.7
W
I
FSM
Non repetitive surge peak forward current
for unidirectional types
tp = 10ms
Tj initial = T
amb
30
A
T
stg
T
j
Storage temperature range
Maximum junction temperature
- 65 to + 175
175
°C
°
C
T
L
Maximum lead temperature for soldering during 10s a 5mm
from case.
230
°
C
Note 1
: For a surge greater than the maximum values, the diode will fail in short-circuit.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
February 2003- Ed : 3A
Symbol
Parameter
Value
Unit
R
th (j-l)
R
th (j-a)
Junction to leads
60
°C/W
°
C/W
Junction to ambient on printed circuit.
L
lead
= 10 mm
100
THERMAL RESISTANCES
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BZW04P110B 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:TRANSZORB? Transient Voltage Suppressors
BZW04P111 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:TRANSIENT VOLTAGE SUPPRESSOR
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BZW04P11B/4 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 11V 7% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
BZW04P11B/54 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 11V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C