參數(shù)資料
型號(hào)： BZW04P102
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
封裝： PLASTIC, DO-41, 2 PIN
文件頁(yè)數(shù)： 4/5頁(yè)
文件大?。?/td> 66K
代理商： BZW04P102
BZW04P-5V8 thru BZW04-376
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88316
4
08-Jul-03
0
25
50
75
100
0
75
25
50
100
125
150
175
200
P
eak
Pulse
P
o
w
er
(P
PP
)or
Current
(I
PPM
)
Der
ating
in
P
ercentage
,%
TA -- Ambient Temperature (
°C)
1
5
10
50
100
Fig. 2 -- Pulse Derating Curve
Fig. 6 -- Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
I FSM
-
-P
eak
F
orw
ard
Surge
Current
(A)
Number of Cycles at 60 Hz
C
J-
-J
unction
Capacitance
(pF)
10
100
1000
10,000
100
10
1
1000
V(BR) -- Breakdown Voltage (V)
TJ = 25
°C
f = 1.0MHz
Vsig = 50mVp-p
10
50
100
200
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
td
Fig. 3 -- Pulse Waveform
PM
(A
V)
,Steady
State
P
o
w
er
Dissipation
(W)
TJ = 25
°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of IPPM
0
1.0
2.0
3.0
4.0
t -- Time (ms)
Fig. 5 -- Steady State Power Derating Curve
0
50
100
150
I PPM
--
P
eak
Pulse
Current,
%
I
RSM
tr = 10
sec.
Half Value – IPPM
2
10/1000
sec. Waveform
as defined by R.E.A.
Peak Value
IPPM
0
0.25
0.50
0.75
1.00
0
75
25
100
125
150
175
200
Fig. 7 --Typical Reverse Leakage Characteristics
TL -- Lead Temperature (
°C)
50
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
I D
--
Instantaneous
Re
v
erse
Leakage
Current
(
A)
0.01
0.1
10
100
1
0
100
200
V(BR) -- Breakdown Voltage (V)
300
400
500
Measured at Devices
Stand-off Voltage, VWM
TA = 25
°C
L = 0.375" (9.5mm)
Lead Lengths
60 HZ Resistive or
Inductive Load
Fig. 4 -- Typical Junction Capacitance
0.1
s
1.0
s10s
100
s
1.0ms
10ms
P
PPM
--
P
eak
Pulse
P
o
w
er
(kW)
100
10
1
0.1
td -- Pulse Width (sec.)
Fig. 1 – Peak Pulse Power Rating Curve
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
相關(guān)PDF資料
PDF描述
BZW04P110B 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
BZW04-299BRL 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
BZW04P23B 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41
BZW04-53 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
BZW06-188BRL 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BZW04P102B 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:TRANSZORB? Transient Voltage Suppressors
BZW04P10B 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:TRANSIENT VOLTAGE SUPPRESSOR
BZW04P10B/1 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 10V 7% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
BZW04P10B/4 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 10V 7% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
BZW04P10B/54 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 10V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*