參數(shù)資料
型號: BZW03C56
廠商: Vishay Intertechnology,Inc.
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Silicon Z-Diodes and Transient Voltage Suppressors
中文描述: 硅的Z -二極管和瞬態(tài)電壓抑制器
文件頁數(shù): 7/9頁
文件大?。?/td> 48K
代理商: BZW03C56
1996 May 14
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZW03 series
GRAPHICAL DATA
Fig.2
Maximum total power dissipation as a
function of temperature.
Solid line: tie-point temperature; lead length = 10 mm.
Dotted line: ambient temperature; device mounted as
shown in Fig.6.
handbook, halfpage
0
200
0
2
4
MBH447
Ptot
(W)
100
T (
°
C)
T
j
= 25
°
C prior to surge.
Fig.3
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
10
2
10
10
2
10
3
4
10
1
1
tp (ms)
PZSM
(W)
10
MBH448
T
j
= 25
°
C prior to surge.
For definition of exponential pulse see Fig.7.
Fig.4
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (exponential pulse).
handbook, halfpage
10
2
10
2
10
3
4
10
1
1
t2 (ms)
PRSM
(W)
10
MBH449
T
j
= 25
°
C.
Fig.5
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0
2
0
2
4
MBH450
IF
(A)
1
VF (V)
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BZW03-C56 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Voltage regulator diodes
BZW03C56-TAP 功能描述:穩(wěn)壓二極管 56 Volt 20W 6% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
BZW03C56-TR 功能描述:穩(wěn)壓二極管 56 Volt 20W 6% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
BZW03C62 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon Z-Diodes and Transient Voltage Suppressors
BZW03-C62 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Voltage regulator diodes