參數(shù)資料
型號: BZT52B62-V-G-08
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 62 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝: GREEN PACKAGE-2
文件頁數(shù): 1/8頁
文件大?。?/td> 109K
代理商: BZT52B62-V-G-08
BZT52-V-G-Series
Vishay Semiconductors
Document Number 83340
Rev. 1.1, 26-Aug-10
www.vishay.com
1
17431
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Small Signal Zener Diodes
Features
Silicon planar power zener diodes
These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type
designation BZX84 series, the dual zener
diode common anode configuration in the
SOT-23 case with type designation AZ23
series and the dual zener diode common
cathode configuration in the SOT-23 case with
type designation DZ23 series.
The zener voltages are graded according to the
international E 24 standard.
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case:
SOD-123
Weight:
approx. 9.4 mg
Packaging codes/options:
18/10 k per 13 " reel (8 mm tape), 10 k/box
08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current see table
" Characteristics "
Power dissipation
1)
Diode on ceramic substrate 0.7 mm; 2.5 mm
2
pad areas
2)
Diode on ceramic substrate 0.7 mm; 5 mm
2
pad areas
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
1)
Valid provided that electrodes are kept at ambient temperature
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
Test condition
Symbol
Value
Unit
P
tot
P
tot
500
2)
410
1)
mW
Power dissipation
mW
Test condition
Symbol
Value
Unit
R
thJA
300
1)
°C/W
T
J
T
S
150
°C
Storage temperature range
- 65 to + 150
°C
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BZT52B62-V-GS08 功能描述:穩(wěn)壓二極管 62 Volt 0.5W 2% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
BZT52B62-V-GS18 功能描述:穩(wěn)壓二極管 62 Volt 0.5W 2% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
BZT52B68 功能描述:穩(wěn)壓二極管 Zener 410mW 2% 68V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
BZT52-B68 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES
BZT52B68 RHG 功能描述:DIODE ZENER 68V 500MW SOD123F 制造商:taiwan semiconductor corporation 系列:- 包裝:帶卷(TR) 零件狀態(tài):在售 電壓 - 齊納(標(biāo)稱值)(Vz):68V 容差:±2% 功率 - 最大值:500mW 阻抗(最大值)(Zzt):240 Ohms 不同?Vr 時的電流 - 反向漏電流:45nA @ 47.6V 不同 If 時的電壓 - 正向(Vf:1V @ 10mA 工作溫度:150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:SOD-123F 供應(yīng)商器件封裝:SOD-123F 標(biāo)準(zhǔn)包裝:3,000